机译:应变:纳米级MOSFET中载流子迁移率更高的解决方案
Department of Electrical and Computet Engineering, University of Florida, Gainesville, Florida;
Department of Electrical and Computet Engineering, University of Florida, Gainesville, Florida;
Department of Electrical and Computet Engineering, University of Florida, Gainesville, Florida;
Department of Electrical and Computet Engineering, University of Florida, Gainesville, Florida;
stress; uniaxial; biaxial; band structure; effective mass; scattering;
机译:工艺诱导的单轴应变对纳米级pMOSFET载流子迁移率温度依赖性的影响
机译:通过应变工程增强未来薄体MOSFET的载流子迁移能力
机译:纳米级应变CMOSFET中的漏极电流与应变诱导的迁移率相关
机译:双轴和单轴应变对体和超薄SOI MOSFET中载流子迁移率影响的实验研究
机译:拉伸硅:单轴和双轴应变产生过程,以及绝缘体上硅MOSFET的迁移率提高。
机译:具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
机译:具有位置载波散射依赖性的准弹出电流,电荷和电容模型,用于纳米级别的对称DG MOSFET有效