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Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

机译:应变:纳米级MOSFET中载流子迁移率更高的解决方案

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摘要

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown impressive performance improvements over the past 10 years by incorporating strained silicon (Si) technology. This review gives an overview of the impact of strain on carrier mobility in Si n- and pMOSFETs by considering strain-induced band splitting, band warping and consequent carrier repopulation, and altered conductivity effective mass and scattering rate. Different surface orientations, channel directions, and gate electric fields are included for a fully theoretical understanding. The results are used to predict strain-enhanced silicon-on-insulator (SOI) and multigate device performance, mainly focusing on potential 22-nm and beyond device options such as double-gate and trigate fin field-effect transistor (FinFET) structures. Insights into strain-enhanced potential future channel materials (SiGe, Ge, and CiaAs) are also summarized. Finally, recent technology nodes with strain engineering are reviewed, and the future developing trend is given.
机译:通过结合应变硅(Si)技术,金属氧化物半导体场效应晶体管(MOSFET)在过去十年中表现出了令人印象深刻的性能提升。本文通过考虑应变引起的能带分裂,能带翘曲和随之而来的载流子再填充以及电导率有效质量和散射率的变化,概述了应变对Si n-和pMOSFET中载流子迁移率的影响。包括了不同的表面方向,通道方向和栅极电场,以实现完全的理论理解。结果可用于预测应变增强型绝缘体上硅(SOI)和多栅极器件的性能,主要集中于潜在的22 nm以及其他器件选择(例如双栅和三栅鳍式场效应晶体管(FinFET)结构)以外的器件。还总结了对应变增强的潜在未来通道材料(SiGe,Ge和CiaAs)的见解。最后,回顾了应变工程的最新技术节点,并给出了未来的发展趋势。

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