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首页> 外文期刊>Applied Computational Electromagnetics Society journal >Transient Electro-Thermal Analysis of a Common Source Amplifier Circuit with a Physics-based MOSFET Model
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Transient Electro-Thermal Analysis of a Common Source Amplifier Circuit with a Physics-based MOSFET Model

机译：基于物理MOSFET模型的共源放大电路的瞬态电热分析

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摘要

An algorithm that combines a common source amplifier with the physics-based metal-oxide-semiconductor field effect transistor (MOSFET) model is proposed. By solving the coupled drift-diffusion model equations with spectral element time-domain (SETD) method, the distribution of electron quasi-Fermi potential, hole quasi-Fermi potential and the potential inside the MOSFET is obtained. The corresponding current densities and electric intensities distributed in the device can be used to couple the heat conduction equation. Furthermore, the Kirchhoff laws should be satisfied when the MOSFET device is inserted in the circuit. The Newton-Raphson method is used to solve the nonlinear circuit equations due to the existence of semiconductor devices. The transient electro-thermal characteristics of a common source amplifier circuit have been analyzed, and the numerical results demonstrate the validity of the proposed method.
机译：提出了一种将公共源极放大器与基于物理的金属氧化物半导体场效应晶体管（MOSFET）模型相结合的算法。通过使用光谱元素时域（SETD）方法求解耦合的漂移扩散模型方程，可以获得电子准费米电势，空穴准费米电势和MOSFET内部电势的分布。设备中分布的相应电流密度和电强度可用于耦合热传导方程。此外，将MOSFET器件插入电路时，应满足基尔霍夫定律。由于存在半导体器件，牛顿-拉夫森法被用于求解非线性电路方程。分析了共源放大电路的瞬态电热特性，数值结果证明了该方法的有效性。

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