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Current-voltage characterization of Au contact on sol-gel ZnO films with and without conducting polymer

机译：含和不含导电聚合物的溶胶-凝胶ZnO薄膜上Au接触的电流-电压特性

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摘要

This study investigates the current density-voltage (J-V) characteristics of Au-type ZnO and Au/ polyaniline (PANI)-type ZnO devices. ZnO films were prepared by the sol-gel method. For Au-type ZnO devices, native defects and impurities resident within the ZnO depletion region contribute to barrier thinning of, carrier hopping across, and tunneling through the Schottky barrier. This leads to the formation of nonalloyed ohmic contacts. However, rectifying junctions were formed on n-type ZnO by employing the simple technique of spin-coating PANI to act as the electron-blocking layer. Our present results suggest that the ZnO depletion region at the PANI-type ZnO interface is not the origin of the rectifying behavior of Au/PANI-type ZnO contact. In addition, the presence of the built-in potential of Au/PANI-type ZnO devices could result in the shift of the J-Vcurve toward negative voltage. Excellent agreement between simulated and measured data was obtained when the built-in potential was taken into account in the J-V relationship.
机译：本研究研究了Au / n型ZnO和Au /聚苯胺（PANI）/ n型ZnO器件的电流密度-电压（J-V）特性。通过溶胶-凝胶法制备ZnO薄膜。对于Au / n型ZnO器件，存在于ZnO耗尽区内的固有缺陷和杂质会导致势垒变薄，载流子跃变和隧穿肖特基势垒。这导致形成非合金欧姆接触。然而，通过使用旋涂PANI的简单技术充当电子阻挡层，在n型ZnO上形成了整流结。我们目前的结果表明，PANI / n型ZnO界面处的ZnO耗尽区不是Au / PANI / n型ZnO接触的整流行为的起源。另外，Au / PANI / n型ZnO器件的内置电势可能会导致J-Vcurve向负电压移动。当在J-V关系中考虑到内置电位时，在模拟数据和测量数据之间获得了极好的一致性。

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  • 来源
    《Applied Surface Science》 |2010年第14期|p.4493-4496|共4页
  • 作者

    Yow-Jon Lin; rnMei-Jyuan Jheng; rnJian-Jhou Zeng;

  • 作者单位

    Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan;

    Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan;

    Department of Physics, National Changhua University of Education, Changhua 500, Taiwan;

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  • 正文语种 eng
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  • 关键词

    zinc oxide; schottky emission; oxides; polymer;

    机译：氧化锌肖特基发射;氧化物聚合物;

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