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首页> 外文期刊>Arabian Journal for Science and Engineering >Design and Optimization of Novel Shaped FinFET
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Design and Optimization of Novel Shaped FinFET

机译：新型异型FinFET的设计与优化

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摘要

A novel high-performance and miniaturized fin-shaped field effect transistor has been proposed which has been named as rectzoidal (rectz) because of its origin from the existing rectangular (rect) and trapezoidal (trap) structures. The rationale behind proposing this structure is to sustain the integration of millions of transistors on integrated circuits (ICs), further utilizing these scaled transistors in advanced processors of leading semiconductor industries. The work presented here is divided into two phases: first phase presents the proposed transistor design at 20nm gate length and its comparative simulation analysis with the previous rect and trap transistor structures in terms of short channel effects and other analog and RF parameters like transconductance, output conductance, intrinsic gain, gate capacitance, unity gain frequency etc. using Cogenda three-dimensional Technology Computer-Aided Design (TCAD) tool. In the subsequent phase, i.e., optimization phase, artificial neural network was trained with design parameters of proposed structure and fitness function was formulated using weighted sum approach. Evolutionary and swarm-based optimization algorithms have been applied to obtain optimum design parameters of proposed transistor structure corresponding to minimum fitness function value. Results obtained through these optimizers are in good consistence with TCAD simulation results.
机译：已经提出了一种新颖的高性能和小型化的鳍形场效应晶体管，由于其源自现有的矩形（矩形）和梯形（阱）结构，因此被称为矩形（rectzoidal）（矩形）。提出这种结构的基本原理是维持数以百万计的晶体管在集成电路（IC）上的集成，并在领先的半导体行业的先进处理器中进一步利用这些按比例缩放的晶体管。这里介绍的工作分为两个阶段：第一阶段介绍了在20nm栅极长度下的拟议晶体管设计，以及与前者的rect和trap晶体管结构在短沟道效应以及其他模拟和RF参数（如跨导，输出）方面的比较模拟分析使用Cogenda三维技术计算机辅助设计（TCAD）工具，可以测量电导率，固有增益，栅极电容，单位增益频率等。在随后的阶段，即优化阶段，使用拟议结构的设计参数训练人工神经网络，并使用加权和方法制定适应度函数。已经应用基于进化和群体的优化算法来获得与最小适应度函数值相对应的拟议晶体管结构的最佳设计参数。通过这些优化器获得的结果与TCAD仿真结果非常一致。

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