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Proximity correction and resolution enhancement of plasmonic lens lithography far beyond the near field diffraction limit

机译：等离子透镜光刻的接近度校正和分辨率增强，远远超出了近场衍射极限

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摘要

Near-field optical imaging methods have been suffering from the issue of a near field diffraction limit, i.e. imaging resolution and fidelity depend strongly on the distance away from objects, which occurs due to the great decay effect of evanescent waves. Recently, plasmonic cavity lens with off-axis light illumination was proposed as a method for going beyond the near field diffraction limit for imaging dense nanoline patterns. In this paper, this investigation was further extended to more general cases for isolated and discrete line patterns, by enhancing the resolution and correcting the proximity effect with assistant peripheral groove structures. Experiment results demonstrate that the width of single, double and multiple line patterns is well controlled and the uniformity is significantly improved in lithography with a 365?nm light wavelength and 120 nm working distance, being approximately ten times the air distance defined by the near field diffraction limit. The methods are believed to find applications in nanolithography, high density optical storage, scanning probe microscopy and so forth.
机译：近场光学成像方法一直存在近场衍射极限的问题， ie 成像分辨率和保真度很大程度上取决于与物体之间的距离，这是由于e逝的衰减效果很大波浪。近来，提出了具有离轴光照明的等离子腔透镜作为超越近场衍射极限来成像密集的纳米线图案的方法。在本文中，通过提高分辨率并使用辅助外围凹槽结构校正邻近效应，该研究进一步扩展到了隔离和离散线条图案的更一般情况。实验结果表明，单线，双线和多线图案的宽度得到了很好的控制，并且在365？nm的光波长和120nm的工作距离的光刻中，均匀性得到了显着改善，大约是近场定义的空气距离的十倍。衍射极限。据信该方法可用于纳米光刻，高密度光学存储，扫描探针显微镜等领域。

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