Electroluminescence at 1.3 mu m from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition

Rajesh Mohan; Nishioka Masao; Arakawa Yasuhiko

首页> 外文期刊>Japanese journal of applied physics >Electroluminescence at 1.3 mu m from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition

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Electroluminescence at 1.3 mu m from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition

机译：通过金属有机化学气相沉积在Ge / Si衬底上单片生长的InAs / GaAs量子点在1.3μm处的电致发光

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We report the first demonstration of electroluminescence at 1.3 mu m from InAs/GaAs quantum dots (QDs) monolithically grown on a Ge/Si substrate by metal organic chemical vapor deposition (MOCVD). High-density coalescence-free InAs/Sb: GaAs QDs emitting at 1.3 mu m were obtained on a GaAs/Ge/Si wafer. The post-growth annealing of the GaAs buffer layer shows a significant improvement in the room-temperature (RT) photoluminescence (PL) intensity of QDs grown on a GaAs/Ge/Si wafer, comparable to those QDs grown on a reference GaAs substrate. Together, these results are promising for the realization of a QD laser on a Si substrate by MOCVD for silicon photonics application. (C) 2016 The Japan Society of Applied Physics

机译：我们报告了通过金属有机化学气相沉积（MOCVD）在Ge / Si衬底上整体生长的InAs / GaAs量子点（QD）在1.3微米处进行电致发光的首次演示。在GaAs / Ge / Si晶片上获得了高密度无聚结的InAs / Sb：以1.3微米发射的GaAs QD。与在参考GaAs衬底上生长的QD相比，GaAs缓冲层的生长后退火显示出在GaAs / Ge / Si晶片上生长的QD在室温（RT）的光致发光（PL）强度方面的显着改善。在一起，这些结果有望通过MOCVD在硅衬底上实现QD激光，用于硅光子学应用。（C）2016年日本应用物理学会

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《Japanese journal of applied physics》 |2016年第10期|100304.1-100304.4|共4页
作者
Rajesh Mohan; Nishioka Masao; Arakawa Yasuhiko;
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Univ Tokyo, Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan;

Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan;

Univ Tokyo, Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan|Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan;

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1. Effect of strain-compensation in stacked 1.3 mu m InAs/GaAs quantum dot active regions grown by metalorganic chemical vapor deposition [J] . Nuntawong N, Birudavolu S, Hains CP, Applied Physics Letters . 2004,第15期

机译：金属有机化学气相沉积法生长的1.3μmInAs / GaAs量子点堆叠有源区中的应变补偿效应
2. 1.3 μm InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition [J] . Kun-Fu Huang, Tung-Po Hsieh, Nien-Tze Yeh, Journal of Crystal Growth . 2004,第1a3期

机译：1.3μmInAs / GaAs量子点直接被金属有机化学气相沉积生长的GaAs覆盖
3. Metal organic chemical vapor deposition growth of high density InAs/Sb:GaAs quantum dots on Ge/Si substrate and its electroluminescence at room temperature [J] . Mohan Rajesh, Katsuaki Tanabe, Satoshi Kako, Japanese journal of applied physics . 2014,第4S期

机译：Ge / Si衬底上高密度InAs / Sb：GaAs量子点的金属有机化学气相沉积生长及其室温电致发光
4. 1.3 to 1.5 /spl mu/m range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition [C] . Hsieh, T.-P., Yeh, Indium Phosphide and Related Materials, 2003. International Conference on . 2003

机译：金属有机化学气相沉积法生长的InAs / GaAs量子点的发射范围为1.3至1.5 / spl mu / m
5. III-phosphide semiconductor self-assembled quantum dots grown by metallorganic chemical vapor deposition. [D] . Ryou, Jae-Hyun. 2001

机译：通过金属有机化学气相沉积法生长的III型磷化物半导体自组装量子点。
6. InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition [O] . Senlin Li, Qingqing Chen, Shichuang Sun, 2013

机译：通过使用金属有机化学气相沉积法简单地改变V / III比可实现宽范围可调密度的InAs / GaAs量子点
7. Charged exciton emission at 1.3 $\mu$m from single InAs quantum dots grown by metalorganic chemical vapor deposition [O] . Cade, N. I., Gotoh, H., Kamada, H., 2005

机译：单个Inas量子点的激子发射电荷为1.3美元/μ美元通过金属有机化学气相沉积生长

Electroluminescence at 1.3 mu m from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition

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