Improved GaN-on-Si epitaxial quality by incorporating various Si_xN_y interlayer structures

著录项

• 来源
  《Journal of Crystal Growth》 |2014年第1期|27-32|共6页
• 作者

  Tzu-Yu Wang; Sin-Liang Ou; Ray-Hua Horng; Dong-Sing Wuu;

  展开▼
• 作者单位

  Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC;

  Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC;

  Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC,Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, ROC;

  Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC,Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591 Taiwan, ROC;

  展开▼
• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1.Stresses; A1.Dislocations; A3.Metalorganic chemical vapor deposition; B1.Nitrides; B2.Semiconducting Ⅲ-Ⅴ materials;

  机译：A1。应力A1。脱位;A3。金属有机化学气相沉积;B1氮化物;B2。Ⅲ-Ⅴ族半导体材料;