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首页> 外文期刊>Journal of Crystal Growth >Deposition of GaN films on crystalline rare earth oxides by MOCVD
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Deposition of GaN films on crystalline rare earth oxides by MOCVD

机译：通过MOCVD在晶体稀土氧化物上沉积GaN膜

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摘要

Epitaxy of GaN films on crystalline rare earth oxide (cREO) buffer layers on Si(111) substrates was performed to explore the possibility of cREOs as a buffer layer for GaN-on-Si epitaxy. MOCVD GaN films were first deposited on Er_2O_3 and Gd_2O_3 layers with a MBE GaN capping layer to prevent reduction of the oxide in the H_2 environment of an MOCVD reactor. This showed that a multi-layer stack of Er_2O_3 andGd_2O_3 results in a higher quality GaN film than individual cREO layers with the rms roughness improvement of ＞ 1 nm. MOCVD GaN films were also deposited on bare multilayer stacks of Er_2O_3 and Gd_2O_3 by first depositing a low temperature GaN layer grown without the presence of H_2 at 700℃ followed by a high temperature GaN film at 1030 ℃. This resulted in smooth films with rms roughness around 1 nm and XRD rocking curve FWHM values of 1360" for the (002) peak. For depositions on both GaN capped and bare oxides, nitridation of the oxides was found with XRD after the wafers went through the MOCVD process. This nitridation process could be impactful for the epitaxy of GaN-on-Si with cREOs by serving as a method of decoupling the epitaxial film from the mechanical constraints of the Si substrate.
机译：进行了在Si（111）衬底上的晶体稀土氧化物（cREO）缓冲层上的GaN膜的外延研究，以探索cREOs作为GaN-on-Si外延的缓冲层的可能性。首先使用MBE GaN覆盖层将MOCVD GaN膜沉积在Er_2O_3和Gd_2O_3层上，以防止在MOCVD反应器的H_2环境中还原氧化物。这表明，与单独的cREO层相比，Er_2O_3和Gd_2O_3的多层堆叠可产生更高质量的GaN膜，且均方根粗糙度提高了> 1 nm。通过首先沉积在700℃下不存在H_2的情况下生长的低温GaN层，然后沉积1030℃的高温GaN膜，也可以在Er_2O_3和Gd_2O_3的裸露多层堆叠上沉积MOCVD GaN膜。这样得到的平滑膜的均方根粗糙度约为1 nm，（002）峰的XRD摇摆曲线FWHM值为1360“。对于在GaN封盖的氧化物和裸露的氧化物上进行沉积，在晶圆通过后，XRD都会发现氧化物的氮化该氮化工艺可作为一种将外延膜与Si衬底的机械约束脱钩的方法，对采用cREO的GaN-on-Si的外延产生影响。

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