Suppression of short step bunching generated on 4H-SiC Si-face substrates with vicinal off-angle

Keiko Masumoto; Kentaro Tamura; Chiaki Kudou; Johji Nishio; Sachiko Ito; Kazutoshi Kojima; Toshiyuki Ohno; Hajime Okumura

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Suppression of short step bunching generated on 4H-SiC Si-face substrates with vicinal off-angle

机译：抑制具有邻角的4H-SiC Si面基板上产生的短步成束

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We report on an attempt to suppress the short step bunching (SSB) generated on substrates with a vicinal off-angle during an increase in the temperature of H_2-atmosphere treatment prior to epitaxial growth. The relationship between etching depth and SSB density was investigated by adding SiH_4 or C_3H_8 and varying the H_2 flow rate. We found that etching depth and SSB density decreased when SiH_4 was added and the H_2 flow rate was reduced; the SSB density decreased to one-tenth of that obtained under usual conditions. In contrast, the SSB density increased when C_3H_8 was added, although the etching depth decreased. We discuss differences between adding SiH_4 or C_3H_8 and reducing the H_2 flow rate. We conclude that it is important to not only decrease the etching depth but also inhibit the etching reactions so that SSB generation can be suppressed.

机译：我们报告了一种尝试，以抑制在外延生长之前H_2大气处理温度升高期间，在具有邻角倾斜的基底上产生的短步聚束（SSB）。通过添加SiH_4或C_3H_8并改变H_2流量来研究蚀刻深度与SSB密度之间的关系。我们发现，当添加SiH_4时，蚀刻深度和SSB密度降低，而H_2流速降低； SSB密度降低到通常条件下获得的密度的十分之一。相反，尽管蚀刻深度减小，但是当添加C_3H_8时SSB密度增加。我们讨论添加SiH_4或C_3H_8与降低H_2流量之间的区别。我们得出结论，重要的是不仅要减小蚀刻深度，而且还要抑制蚀刻反应，以便可以抑制SSB的产生。

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来源
《Journal of Crystal Growth》 |2014年第1期|673-676|共4页
作者
Keiko Masumoto; Kentaro Tamura; Chiaki Kudou; Johji Nishio; Sachiko Ito; Kazutoshi Kojima; Toshiyuki Ohno; Hajime Okumura;
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作者单位

R&D Partnership for Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Central 2 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

R&D Partnership for Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo, Kyoto 615-8585, Japan;

R&D Partnership for Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,Panasonic Corporation, 700 Tomonobu, Bizen-city, Okayama 705-8585, Japan;

R&D Partnership for Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai, Kawasaki, Kanagawa 212-8582, Japan;

R&D Partnership for Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Central 2 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

R&D Partnership for Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Central 2 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

R&D Partnership for Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan;

R&D Partnership for Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Central 2 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Crystal morphology; A3. Chemical vapor deposition processes; B1. Inorganic compounds; B2. Semiconducting silicon compounds;

机译：A1。晶体形态A3。化学气相沉积工艺;B1。无机化合物;B2。半导体硅化合物;

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专利

1. The growth of 3-inch 4H-SiC Si-face epitaxial wafer with vicinal off-angle [J] . Keiko Masumoto, Kazutoshi Kojima, Hajime Okumura Materials science forum . 2013,第期

机译：具有邻角的3英寸4H-SiC Si面外延晶片的生长
2. Starting point of step-bunching defects on 4H-SiC Si-face substrates [J] . Kentaro Tamura, Masayuki Sasaki, Chiaki Kudou, Materials science forum . 2015,第期

机译：4H-SiC Si面基板上分步缺陷的起点
3. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle [J] . C. Lewis Reynolds, Chiaki Kudou, Hajime Okumura, Materials . 2014,第10期

机译：偏角为1°的4H-SiC Si面同质外延层生长过程中3C夹杂物形成的抑制
4. Short-length step morphology on 4° off Si-face epitaxial surface grown on 4H-SiC substrate [C] . Kenji Momose, Michiya Odawara, Yutaka Tajima, Silicon carbide and related materials 2009 . 2010

机译：在4H-SiC衬底上生长的硅面外延表面4°处的短长度台阶形貌
5. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle [O] . Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, 2014

机译：1°偏角的4H-SiC硅面同质外延层生长过程中3C夹杂物形成的抑制
6. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle [O] . Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, 2014

机译：在具有1°偏角的4H-siC si面同质外延层生长期间抑制3C-夹杂物形成

Suppression of short step bunching generated on 4H-SiC Si-face substrates with vicinal off-angle

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