Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y_2O_3 on Ge

著录项

• 来源
  《Journal of Crystal Growth》 |2009年第7期|2195-2198|共4页
• 作者

  LK. Chu; W.C. Lee; M.L. Huang; Y.H. Chang; L.T. Tung; C.C. Chang; Y.J. Lee; Kwo; M. Hong;

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• 作者单位

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 3001, Taiwan;

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 3001, Taiwan;

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 3001, Taiwan;

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 3001, Taiwan;

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 3001, Taiwan;

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 3001, Taiwan;

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 3001, Taiwan;

  Department of Physics, National Tsing Hua University, Hsinchu 3001, Taiwan;

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 3001, Taiwan;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A3. Molecular beam epitaxy (MBE); B1. Oxides; B2. Germanium; B3. Field effects transistors;

  机译：A3。分子束外延（MBE）;B1。氧化物;B2。锗;B3。场效应晶体管;