Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD

著录项

• 来源
  《Journal of Crystal Growth》 |2009年第10期|2853-2856|共4页
• 作者

  X.Q. Shen; M. Shimizu; H. Okumura; F.J. Xu; B. Shen; G.Y. Zhang;

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• 作者单位

  Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568, Japan;

  Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568, Japan;

  Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568, Japan;

  School of Physics, Peking University, Beijing 100871, PR China;

  School of Physics, Peking University, Beijing 100871, PR China;

  School of Physics, Peking University, Beijing 100871, PR China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitride;

  机译：A1。表面结构;A3。金属有机化学气相沉积;B1。氮化物;