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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Nanopatterning of polyfluorene derivative using electron-beam lithography
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Nanopatterning of polyfluorene derivative using electron-beam lithography

机译：电子束光刻技术对聚芴衍生物进行纳米构图

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摘要

Direct nanopatterning of polyfluorene derivative is demonstrated using electron-beam lithography. Polyfluorene, which has attracted much attention because of its strong fluorescence and application in organic light emitters, is a negative (crosslinking) type material upon exposure to radiation, and requires a large amount of exposure dose ～2300 μC/cm~2 to be patterned in the present case. This extremely large dose would lead to radiation damage of the polymer. To address this issue, a polyfluorene derivative for acid-catalyzed chemical amplification was synthesized to realize nanopatterning of π-conjugated polymer without degrading its optical property. The synthesized polyfluorene derivative was investigated in terms of sensitivity, optical absorption, and spatial resolution. Sensitivity of 4 μC/cm~2 was achieved, and lines of 70 nm width were fabricated after optimization of the process conditions.
机译：使用电子束光刻技术证明了聚芴衍生物的直接纳米图案化。聚芴因其强大的荧光性和在有机发光体中的应用而备受关注，是一种暴露于辐射下的负（交联）型材料，需要大量的曝光剂量〜2300μC/ cm〜2进行构图在当前情况下。这种极大的剂量将导致聚合物的辐射损伤。为了解决该问题，合成了用于酸催化化学扩增的聚芴衍生物以实现π共轭聚合物的纳米图案化而不会降低其光学性能。研究了合成的聚芴衍生物的敏感性，光吸收和空间分辨率。在优化工艺条件后，获得了4μC/ cm〜2的灵敏度，并制作了70 nm宽的线。

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