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首页> 外文期刊>Journal of Vacuum Science & Technology >Evolution of surface morphology of dry-etched ZnO with Cl_2/Ar plasma
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Evolution of surface morphology of dry-etched ZnO with Cl_2/Ar plasma

机译：Cl_2 / Ar等离子体对干法刻蚀ZnO表面形貌的演变

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摘要

This work elucidates the surface morphologies of dry-etched ZnO films formed by reactive ion etching using a Cl_2/Ar mixture. The root-mean-square (rms) roughness and etching rate were obtained by varying the gas flow ratio, the radio-frequency (rf) plasma power, and the chamber pressure. Atomic force microscopy results and surface topographies are discussed. The rms roughness is highest, 24.20 nm, at a Cl_2/Ar flow rate of 150/10 SCCM (SCCM denotes cubic centimeter per mirfute at STP), a working pressure of 190 mTorr, and a rf power of 300 W. Such films are suitable for use as roughened transparent contact layers in light-emitting diodes. Bearing ratio analysis reveals that under the aforementioned condition, the nanorods covered 25.4% of the total surface area and their maximum height was approximately 150.83 nm. Moreover, high and low etching rates of 300 and 16 A/min were obtained at rf powers of 300 and 50 W, respectively, supporting the ZnO-based devices and the gate-recess process.
机译：这项工作阐明了通过使用Cl_2 / Ar混合物进行反应性离子刻蚀形成的干法刻蚀ZnO膜的表面形貌。通过改变气体流量比，射频（rf）等离子体功率和腔室压力获得均方根（rms）粗糙度和蚀刻速率。讨论了原子力显微镜的结果和表面形貌。在Cl_2 / Ar流量为150/10 SCCM（SCCM表示STP时每立方立方立方厘米），工作压力为190 mTorr，射频功率为300 W时，均方根粗糙度最高，为24.20 nm。适合用作发光二极管中的粗糙透明接触层。承载比分析表明，在上述条件下，纳米棒覆盖了总表面积的25.4％，其最大高度约为150.83 nm。此外，在300和50 W的射频功率下分别获得300和16 A / min的高蚀刻速率和低蚀刻速率，分别支持基于ZnO的器件和栅极凹槽工艺。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2009年第5期|2187-2191|共5页
  • 作者

    Kuang-Po Hsueh; Ren-Jie Hou; Chun-Ju Tun;

  • 作者单位

    Department of Electronics Engineering, Vanung University, Chung-Li, Taiwan 32061, Republic of China;

    Department of Electrical Engineering, National Central University, Chung-Li, Taiwan 32001, Republic of China;

    National Synchrotron Radiation Research Center, Hsinchu, Taiwan 30076, Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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