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Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

机译：垂直相关InAs / GaAs量子点生长的MOVPE的光学表征

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摘要

Structures with vertically correlated self-organised InAs quantum dots (QDs) in a GaAs matrix were grown by the low-pressure metal-organic vapour phase epitaxy (MOVPE) and characterised by different microscopic techniques. Photoluminescence in combination with photomodulated reflectance spectroscopy were applied for characterisation of QDs structures. We show that combination of both methods allows detecting optical transitions originating both from QDs and wetting (separation) layers, which can be than compared with those obtained from numerical simulations. On the basis of obtained results, we demonstrate that photoreflectance spectroscopy is an excellent tool for characterisation of QDs structures wetting layers and for identification of spacer thicknesses in vertically stacked QDs structures.
机译：通过低压金属-有机气相外延（MOVPE）生长GaAs基质中具有垂直相关的自组织InAs量子点（QD）的结构，并通过不同的显微技术对其进行表征。将光致发光与光调制反射光谱结合起来用于表征QDs结构。我们表明，这两种方法的组合可以检测源自QD和润湿（分离）层的光学跃迁，可以将其与从数值模拟获得的跃迁进行比较。在获得的结果的基础上，我们证明了光反射光谱法是表征QDs结构润湿层和识别垂直堆叠QDs结构中间隔物厚度的出色工具。

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