The Properties of a-Si:H p-i-n Solar Cell by Intrinsic Layer's Thickness

Jae-Won Shin Kwang-Mook Park Jin-Eui Kim  Sie-Young Choi

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The Properties of a-Si:H p-i-n Solar Cell by Intrinsic Layer's Thickness

机译：基于本征层厚度的a-Si：H p-i-n太阳能电池的性能

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The hydrogenated amorphous silicon p-i-n solar cells have been deposited on indium tin oxide glass by using the PECVD. Solar cells were fabricated with various thicknesses [50-300 nm] of the i-layer, while the thicknesses of the p- and n-layer were fixed to 25Â nm and 50 nm, respectively. The solar simulator shows the highest value of short-circuit current density and efficiency that are of 6.32 mA/cm2 and 1.36%, respectively for the solar cell with a thickness of 200 nm and the open-circuit voltage is the highest value when thickness of the i-layer is 150 nm.

机译：氢化非晶硅p-i-n太阳能电池已通过使用PECVD沉积在氧化铟锡玻璃上。太阳能电池被制造成具有i层的各种厚度[50-300 nm]，而p层和n层的厚度分别固定为25 nm和50 nm。对于厚度为200 nm的太阳能电池和开路的太阳能模拟器，短路电流密度和效率的最大值分别为6.32 mA / cm 2 和1.36％。当i层的厚度为150 nm时，电压为最大值。

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《Molecular Crystals and Liquid Crystals》 |2011年第1期|p.257-263|共7页
作者
Jae-Won Shin Kwang-Mook Park Jin-Eui Kim Sie-Young Choi;
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作者单位

School of Electronics Engineering, Kyungpook National University, 1370 Sankyuk-dong, Pook-gu Daegu, 702-701, Republic of Korea;

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1. The Properties of a-Si:H p-i-n Solar Cell by Intrinsic Layer's Thickness [J] . JAE-WON SHIN, KWANG-MOOK PARK, JIN-EUI KIM Molecular crystals and liquid crystals . 2011,第551期

机译：基于本征层厚度的a-Si：H p-i-n太阳能电池的性能
2. Influence of the intrinsic layer characteristics on a-Si : H p-i-n solar cell performance analysed by means of a computer simulation [J] . Fantoni A., Viera M., Martins R. Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2002,第2期

机译：通过计算机模拟分析本征层特性对a-Si：H p-i-n太阳能电池性能的影响
3. Effects of intrinsic layer thickness on solar cell parameters of organic p-i-n heterojunction photovoltaic cells [J] . Tetsuya Taima, Masayuki Chikamatsu, Yuji Yoshida, Applied Physics Letters . 2004,第26期

机译：本征层厚度对有机p-i-n异质结光伏电池太阳能电池参数的影响
4. First principles computer model showing the effect of p-layer thickness and front contact barrier height on the performance of a-Si:H p-i-n solar cells [C] . Arch, J.K., Rubinelli, . 1990

机译：第一性原理计算机模型，显示了p层厚度和正面接触势垒高度对a-Si：H p-i-n太阳能电池性能的影响
5. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration [D] . Huang, Zhiquan 2016

机译：薄膜A-Si的光谱椭圆形研究：H / NC-Si：H MicroMorph太阳能电池制造在P-I-N超级型配置
6. Mechanical Properties of ZTO ITO and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells [O] . Claudia Hengst, Siegfried B Menzel, Gayatri K Rane, 2017

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7. Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes [O] . Vygranenko Yuri, Fathi E., Sazonov A., 2010

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8. Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons [R] . Lord, Kenneth, Woodyard, James R. 2002

机译：用40keV电子辐照的a-si：H单结p-i-n太阳能电池的测量和模拟暗J-V特性

The Properties of a-Si:H p-i-n Solar Cell by Intrinsic Layer's Thickness

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