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首页> 外文期刊>Optical engineering >Avalanche photodiode with high responsivity in 0.35μm CMOS
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Avalanche photodiode with high responsivity in 0.35μm CMOS

机译：在0.35μmCMOS中具有高响应度的雪崩光电二极管

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摘要

The presented linear mode avalanche photodiode (APD) uses the standard layers and process steps available in the 0.35-μm Si bulk CMOS process. Due to a low-doped epitaxial layer with a resistivity of 664 Ωcm, a deep intrinsic zone is realized to enable a large depleted absorption region at already moderate bias voltages and therefore ensures a high low-voltage responsivity. In combination with avalanche gain at high bias voltages, this leads to an overall responsivity of 1.7 × 10~5 A/W at 1.1 nW optical input power and 670-nm wavelength. The maximum achieved avalanche gain was 4.94 × 10~5. The maximum -3 dB frequency of 700 MHz was measured at a reverse bias voltage of 30 V and an optical input power of 14.7 μW.
机译：提出的线性模式雪崩光电二极管（APD）使用0.35-μmSi体CMOS工艺中可用的标准层和工艺步骤。由于具有664Ωcm电阻率的低掺杂外延层，可以实现较深的本征区，从而在已经适度的偏置电压下实现大的耗尽吸收区，从而确保了高低压响应度。结合高偏置电压下的雪崩增益，在1.1 nW光输入功率和670 nm波长下，总响应度为1.7×10〜5 A / W。达到的最大雪崩增益为4.94×10〜5。在30 V的反向偏置电压和14.7μW的光输入功率下测量了700 MHz的最大-3 dB频率。

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  • 来源
    《Optical engineering》 |2014年第4期|043105.1-043105.4|共4页
  • 作者

    Wolfgang Gaberl; Kerstin Schneider-Hornstein; Reinhard Enne; Bernhard Steindl; Horst Zimmermann;

  • 作者单位

    Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Gusshausstrasse 25/354, Vienna 1040, Austria;

    Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Gusshausstrasse 25/354, Vienna 1040, Austria;

    Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Gusshausstrasse 25/354, Vienna 1040, Austria;

    Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Gusshausstrasse 25/354, Vienna 1040, Austria;

    Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Gusshausstrasse 25/354, Vienna 1040, Austria;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    avalanche photodiode; photodetector; submicron CMOS technology;

    机译：雪崩光电二极管光电探测器亚微米CMOS技术;

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