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Silicon, germanium and silicon/germanium photocells for thermophotovoltaics applications

机译：用于热光电应用的硅，锗和硅/锗光电池

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摘要

Silicon (Si) and germanium (Ge) are semiconducting materials, which are industrially used for the large-scale production of various electronic devices. Solar cells are commonly manufactured from Si. For thermophotovoltaics (TPV) Si has the disadvantage of a high bandgap of 1.1 eV, which requires the use of a spectrally matched selective emitter. Yb_2O_3 is widely used as an emitter material to illuminate Si photocells. Si concentrator solar cells have been investigated for TPV applications, because they have a high performance at a typical illumination density of 1 W cm~(-2) in a TPV system. Non-concentrator solar cells achieve lower efficiencies under TPV conditions, but up to now they are more cost effective than concentrator cells. A new Si photocell optimized for TPV has a front side textured with rectangular grooves with vertically evaporated contact fingers and a rear surface mirror to reflect sub-bandgap radiation back to the emitter. Ge photocells have a bandgap of 0.66 eV and can effectively be illuminated by a selective Er_2O_3 emitter. Their efficiencies are lower than those of photocells from low bandgap Ⅲ/Ⅴ materials, such as GaSb. But, due to low free carrier absorption in Ge, an effective rear surface mirror can be formed. A reflectance of up to 82-87% for sub-bandgap radiation and a cell efficiency of 13% for solar air mass 0 (AMO) radiation with a cut-off for wavelengths smaller than 900 nm have been achieved with a Ge TPV cell. SiGe photocells allow the variation of the bandgap as a function of the Ge content. In principle, a SiGe photocell can be matched to a given selective emitter spectrum. A first SiGe quantum dot solar cell has achieved 12% efficiency, but still suffers from a low open circuit voltage. The first TPV systems working with Si photocells have been built. A system efficiency of 2.4% can be achieved. The most promising application of Si-based TPV is likely to be an electrically self-powered residential heating system. For a self-powered operation, a TPV system efficiency of 1-2% is sufficient and Si photocells have the advantage of being inexpensive.
机译：硅（Si）和锗（Ge）是半导体材料，在工业上用于各种电子设备的大规模生产。太阳能电池通常由Si制成。对于热光电（TPV），Si具有1.1 eV的高带隙的缺点，这需要使用光谱匹配的选择性发射极。 Yb_2O_3被广泛用作发光硅光电池的发光材料。已经研究了用于TPV应用的Si集中器太阳能电池，因为它们在TPV系统中的典型照明密度为1 W cm〜（-2）时具有高性能。非聚光太阳能电池在TPV条件下效率较低，但是到目前为止，它们比聚光太阳能电池更具成本效益。一种针对TPV进行了优化的新型Si光电管，其正面具有矩形凹槽，该凹槽具有垂直蒸发的接触指和背面镜，可将亚带隙辐射反射回发射极。 Ge光电管的带隙为0.66 eV，可以被选择性的Er_2O_3发射器有效地照亮。它们的效率要比低带隙Ⅲ/Ⅴ材料如GaSb的光电池低。但是，由于锗中的自由载流子吸收低，因此可以形成有效的后表面镜。 Ge TPV电池的亚带隙辐射反射率高达82-87％，太阳空气质量0（AMO）辐射的截止波长小于900 nm的电池效率为13％。 SiGe光电管允许带隙随Ge含量而变化。原则上，SiGe光电管可以匹配给定的选择性发射光谱。第一个SiGe量子点太阳能电池已经达到12％的效率，但是仍然遭受低开路电压的困扰。已经建立了第一个使用Si光电管的TPV系统。可以实现2.4％的系统效率。 Si基TPV的最有希望的应用可能是自供电的住宅供暖系统。对于自供电操作，TPV系统效率为1-2％足够，并且Si光电电池具有价格便宜的优势。

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