...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Superlattices and microstructures >Low-temperature Direct Wafer Bonding Of Gaas/inp
【24h】

Low-temperature Direct Wafer Bonding Of Gaas/inp

机译：Gaas / inp的低温直接晶圆键合

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An approach for low-temperature direct wafer bonding of GaAs/InP was presented. The bonding procedure was carried out at temperatures from 350 to 500 ℃, and the bonded n-GaAs-InP specimens were obtained even at a temperature as low as 350 ℃. The compositional profile on the GaAs/InP heterointerface was studied by X-ray photoelectron spectroscopy. The bonded interfacial properties were also characterized by current-voltage (I-V) and bonding strength measurement. The experimental results revealed an InGaAsP (or/and InGaAs) interlayer formed at the bonded interface, which influences the electrical property as well as the bonding strength. For the specimen bonded at 350 ℃, the transport of major carriers could be explained by a tunneling effect. But the carrier transport was described by the thermionic emission theory for the specimen bonded at 450 ℃. Finally, the mechanism of GaAs/InP bonding was discussed.
机译：提出了一种用于GaAs / InP低温直接晶圆键合的方法。键合过程在350至500℃的温度下进行，即使在低至350℃的温度下也可以获得键合的n-GaAs / n-InP样品。通过X射线光电子能谱研究了GaAs / InP异质界面上的成分分布。结合的界面性质还通过电流-电压（I-V）和结合强度测量来表征。实验结果表明，在键合界面处形成了InGaAsP（或InGaAs）中间层，这会影响电性能以及键合强度。对于在350℃粘结的试样，主要载流子的传输可以用隧穿效应来解释。但通过热电子发射理论描述了在450℃下粘结的样品的载流子传输。最后，讨论了GaAs / InP键合的机理。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号