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首页> 外文期刊>Thin Solid Films >The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition
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The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition

机译：Sb和Ga中间层对金属有机化学气相沉积生长GaAs上外延GaSb界面层性能的影响

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摘要

A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski-Krastanov mechanism or via a blend of the Stranski-Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.
机译：在这项研究中证明了一种在GaAs（001）衬底上生长高质量GaSb外延层的方法。发现通过在包含GaAs缓冲层的GaAs衬底上沉积薄的Sb前体层可以获得优良的GaSb / GaAs界面。建议通过接口失配（IMF）增长模式进行增长。如果没有这种处理，GaSb外延层可能会根据Stranski-Krastanov机制或通过Stranski-Krastanov和IMF机制的混合而生长，从而导致GaSb / GaAs界面质量下降。这可能是由于阴离子的混合，导致了异质界面处的湍流成分和失配位错分布。看起来，通过添加Sb层，可以在GaSb / GaAs界面处形成IMF阵列，从而获得优异的GaSb层，而无需更改生长参数。

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