Investigation of low field and high temperature SiO_2 and ONO leakage currents using the floating gate technique

B. De Salvo; G. Ghibaudo; G. Pananakakis; B. Guillaumot

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Investigation of low field and high temperature SiO_2 and ONO leakage currents using the floating gate technique

机译：使用浮栅技术研究低场和高温SiO_2和ONO泄漏电流

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In this work a critical analysis of the floating gate technique, for measurement of leakage currents

机译：在这项工作中，提出了对浮栅技术的严格分析，用于测量泄漏电流

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |1999年第0期|共6页
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B. De Salvo; G. Ghibaudo; G. Pananakakis; B. Guillaumot;
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正文语种 eng
中图分类晶体学;
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1. Investigation of low field and high temperature SiO_2 and ONO leakage currents using the floating gate technique [J] . B. De Salvo, G. Ghibaudo, G. Pananakakis, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1999,第0期

机译：使用浮栅技术研究低场和高温SiO_2和ONO泄漏电流
2. Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements [J] . Burignat S, Plossu C, Boivin P Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2007,第16a17期

机译：通过直接和浮栅技术测量从非易失性浮动薄隧道氧化物存储器件中的超低水平陷阱辅助泄漏电流提取的缺陷的空间和能量分布
3. Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films [J] . E. Verrelli, D. Tsoukalas Journal of Applied Physics . 2013,第11期

机译：低温氧化films薄膜栅氧化物泄漏电流的研究。
4. Study of stress-induced leakage current and charge loss of nonvolatile memory cell with 70 /spl Aring/ tunnel oxide using floating-gate integrator technique [C] . Bin Wang, Chih-Hsin Wang, Yanjun Ma, Integrated Reliability Workshop Final Report, 2004 IEEE International . 2004

机译：浮栅积分技术研究应力为70 / spl Aring /隧道氧化物的非易失性存储单元的漏电流和电荷损失
5. Investigation of leakage reduction techniques for field programmable gate arrays. [D] . Nair, Pradeep Sreekantan. 2009

机译：研究现场可编程门阵列的泄漏减少技术。
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Investigation of low field and high temperature SiO_2 and ONO leakage currents using the floating gate technique

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