a-Si : H/a-SiOx : H microcavities with a-Si(Er): H active layer

Dukin AA.; Feoktistov NA.; Golubev VG.; Medvedev AV.; Pevtsov AB.; Selkin AV.

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >a-Si : H/a-SiOx : H microcavities with a-Si(Er): H active layer

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a-Si : H/a-SiOx : H microcavities with a-Si(Er): H active layer

机译：a-Si：H / a-SiOx：具有a-Si（Er）：H活性层的H微腔

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Fabry-Perot a-Si:H/a-SiOx:H and a-Si(P):H/SnO2 microcavities (MCs) with Er-doped a-Si:H active regions were fabricated by plasma-enhanced chemical vapor deposition. A metalorganic compound was used to incorporate erbium into the active a-Si:H layer. The room temperature transmission. reflection and spontaneous emission spectra of the MCs with two and three pairs of layers in distributed Bragg reflectors were measured. An intensity enhancement by two order of magnitude and selective narrowing of the 1.54 pm erbium emission line were observed as compared to the case of a single a-Si(Er):H film deposited on a quartz substrate. A theoretical analysis of the experimental data is given. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 15]

机译：通过等离子体增强化学气相沉积法制备了带有Er掺杂a-Si：H有源区的Fabry-Perot a-Si：H / a-SiOx：H和a-Si（P）：H / SnO2微腔（MCs）。使用金属有机化合物将掺入活性a-Si：H层中。室温传输。测量了分布布拉格反射器中具有两对和三对层的MC的反射光谱和自发发射光谱。与在石英衬底上沉积单个a-Si（Er）：H薄膜的情况相比，观察到强度提高了两个数量级，并且选择性缩小了1.54 pm的emission发射线。给出了实验数据的理论分析。（C）2002 Elsevier Science B.V.保留所有权利。 [参考：15]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2002年第1期|共5页
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Dukin AA.; Feoktistov NA.; Golubev VG.; Medvedev AV.; Pevtsov AB.; Selkin AV.;
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正文语种 eng
中图分类晶体学;
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1. a-Si : H/a-SiOx : H microcavities with a-Si(Er): H active layer [J] . Dukin AA., Feoktistov NA., Golubev VG., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2002,第Pta1期

机译：a-Si：H / a-SiOx：具有a-Si（Er）：H活性层的H微腔
2. Polarization splitting of optical resonant modes in a-Si : H/a-SiOx : H microcavities - art. no. 046602 [J] . Dukin AA., Feoktistov NA., Golubev VG., Physical review, E. Statistical physics, plasmas, fluids, and related interdisciplinary topics . 2003,第4aPta2期

机译：a-Si：H / a-SiOx：H微腔中光学共振模的偏振分裂-艺术。没有。 046602
3. Numerical Analysis of Selective ITO/a-Si:H Contacts in Heterojunction Silicon Solar Cells: Effect of Defect States in Doped a-Si:H Layers on Performance Parameters [J] . Balent Jost, Smole Franc, Topic Marko, Photovoltaics, IEEE Journal of . 2021,第3期

机译：异质结硅太阳能电池的选择性ITO / A-Si的数值分析：H异轴硅太阳能电池的触点：缺陷状态在掺杂A-Si：H层性能参数中的影响
4. Efficiency Improvement of a-Si:H/μc-Si:H Tandem Solar Cells by Adding a-SiOx:H Layer between Ag Nano Particles and the Active Layer [C] . Ozcan Abdulkadir, Dhinaharan Nagamalai International Conference on Advances in Computing and Information Technology . 2013

机译：A-Si：H /μC-Si：H串联太阳能电池通过在Ag纳米粒子和有源层之间添加A-SiOx：H层的效率改进
5. The Investigation of the Electronic Properties of Si Based Heterojucntions: A First Principle Study of a-Si:H/c-Si and GaP/Si Heterojunctions [D] . Meidanshahi, Reza Vatan 2019

机译：硅基异质结的电子性质研究：a-Si：H / c-Si和GaP / Si异质结的第一个原理研究
6. On the formation of blisters in annealed hydrogenated a-Si layers [O] . Miklós Serényi, Cesare Frigeri, Zsolt Szekrényes, 2013

机译：在退火的氢化非晶硅层中形成气泡
7. Charge collection in a-Si: H\/a-Si$_{1-x}$C$_{x}$ multilayers photodetectors [O] . Jing, T, Delgado, J C, Bertomeu, J, 1994

机译：a-Si中的电荷收集：H \ / a-Si $ _ {1-x} $ C $ _ {x} $多层光电探测器
8. Charge collection in a-Si:H/a-Si(sub 1-x)C(sub x) multilayers photodetectors [R] . Jing, T., Drewray, J., Hong, W. S., 1994

机译：a-si中的电荷收集：H / a-si（sub 1-x）C（sub x）多层光电探测器

a-Si : H/a-SiOx : H microcavities with a-Si(Er): H active layer

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