...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Photopolymer Science and Technology >Optimization of Dual-BARC Structures on Silicon Oxide and Nitride Layers to be Used for Hyper NA Immersion Lithography
【24h】

Optimization of Dual-BARC Structures on Silicon Oxide and Nitride Layers to be Used for Hyper NA Immersion Lithography

机译：用于超NA浸没式光刻的氧化硅和氮化物层上Dual-BARC结构的优化

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

For the purpose of identifying dual-BARC (Bottom Anti-Reflective Coating) structures for immersion lithography that do not depend on the polarization of light,illumination conditions and pattern sizes or pitches,dual-BARC parameters were optimized.Using our new code,dual-BARC parameters to minimize the substrate reflectance were obtained for BARC formed on a silicon oxide and nitride layer when NA is 1.0,1.1,1.2,1.3 and 1.4.The thickness of the silicon oxide and nitride layer was varied from 10 to 200 nm.It was found that the dual-BARC concept works up to NA =1.1 and 1.4 for BARC on a silicon oxide and a silicon nitride layer,respectively,although for the case of the dual BARC on a silicon oxide layer,the range of the thickness of the oxide layer where the dual-BARC concept works is limited.It was also found that using a structure consisting of a planarization layer combined with a single-layer BARC structure to make a reflection-control structure can work up to NA = 1.4 for both on a silicon oxide and nitride layer.
机译：为了识别不依赖于光的偏振，照明条件和图案尺寸或间距的浸没式光刻的双BARC（底部抗反射涂层）结构，优化了双BARC参数。使用我们的新代码，双当NA为1.0、1.1、1.2、1.3和1.4时，获得了在氧化硅和氮化物层上形成的BARC的-BARC参数，以最小化基板的反射率。氧化硅和氮化物层的厚度在10至200nm之间变化。已经发现，对于在氧化硅和氮化硅层上的BARC，双BARC概念分别适用于NA = 1.1和1.4，尽管对于在氧化硅层上的双BARC而言，厚度范围双BARC概念在其中起作用的氧化物层的限制是有限的。还发现，使用由平坦化层与单层BARC结构结合的结构来构成反射控制结构，对于NA = 1.4都在氧化硅和氮化物层。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号