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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Low-temperature resistivity and microstructure of reactive magnetron co-sputtered Ta-Si-N thin films
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Low-temperature resistivity and microstructure of reactive magnetron co-sputtered Ta-Si-N thin films

机译：反应磁控共溅射Ta-Si-N薄膜的低温电阻率和微观结构

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摘要

The low-temperature electrical property of composite tantalum silicon nitride (Ta-Si-N) thin films deposited at low and high nitrogen flow ratios (FN_2%) has been investigated. The microstructure and morphology of both quasi-amorphous Ta-Si-N films were characterized by a grazing incident x-ray diffractometer, scanning electron microscope and atomic force microscope, which could influence the electrical resistivity of Ta-Si-N at low temperatures of 10-300 K. The film deposited at low FN_2% had a lower resistivity because of low N content compared with that at high FN_2%. The resistivity of Ta-Si-N at low FN_2% distinctly decreased with increasing temperature at 10-300 K while that at high FN_2% had a steep drop at 70-120 K. The transport mechanism of Ta-Si-N resistivity at low temperatures was discussed by the weak localization model. The film deposited at high FN_2% showed crossover from 2D localization to 3D localization while that at low FN_2% exhibited only the 3D localization. Both samples showed that electron-phonon scattering was the dominant scattering mechanism in both 2D and 3D weak localization effects.
机译：研究了在低氮流量比和高氮流量比（FN_2％）下沉积的复合钽氮化硅（Ta-Si-N）薄膜的低温电性能。用掠入射x射线衍射仪，扫描电子显微镜和原子力显微镜对准非晶态Ta-Si-N薄膜的微观结构和形貌进行了表征，这可能会影响Ta-Si-N薄膜在低温下的电阻率。 10-300K。与高FN_2％相比，由于低N含量，在低FN_2％处沉积的薄膜具有较低的电阻率。 Ta-Si-N在低FN_2％处的电阻率在10-300 K时随温度升高而明显降低，而FN_2％在高FN_2％处的电阻率在70-120 K处急剧下降。弱定位模型讨论了温度。在高FN_2％处沉积的膜显示出从2D定位到3D定位的过渡，而在低FN_2％处沉积的膜仅显示3D定位。两种样品均表明，电子-声子散射是2D和3D弱定位效应中的主要散射机制。

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