• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied optics >Gate-controlled diode structure based electro-optical interfaces in standard silicon-CMOS integrated circuitry
【24h】

Gate-controlled diode structure based electro-optical interfaces in standard silicon-CMOS integrated circuitry

机译：标准硅-CMOS集成电路中基于门控二极管结构的电光接口

获取原文
获取原文并翻译 | 示例
       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper, we discuss the emission of visible light by a monolithically integrated silicon gate-controlled diode with the p-n junction reverse-biased. Since the MOS-like diode utilizes the field effect to modulate the optical output, the modulation speed will benefit from this mechanism. Hence, a silicon gate-controlled diode structure for optical modulation analyzed its modulation principle, its dynamic characteristics are presented, and the bandwidth of the device is considered to approach GHz in theory due to the field-induced emission mechanism. The prototype MOS-like diode opens up the design of multiterminal silicon light emitting devices (LEDs), where gate electrodes with more than one gate contact overlap several junctions with different junction intersection geometries. The device appears as a good candidate for optical modulation within silicon technology. (C) 2015 Optical Society of America
机译：在本文中，我们讨论了具有p-n结反向偏置的单片集成硅栅控二极管的可见光发射。由于类似MOS的二极管利用场效应来调制光输出，因此调制速度将受益于这种机制。因此，用于光调制的硅栅控二极管结构分析了其调制原理，提出了其动态特性，并且由于场致发射机制，该器件的带宽在理论上被认为接近GHz。类似于MOS的原型二极管打开了多端子硅发光器件（LED）的设计，其中具有多个栅极接触的栅电极与具有不同结交点几何形状的多个结交叠。该器件似乎是硅技术中光调制的良好候选者。 （C）2015年美国眼镜学会

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号