Electrical and structural properties of antimony-doped p-type ZnO nanorods with self-corrugated surfaces

Kang J.-W.; Choi Y.-S.; Choe M.; Kim N.-Y.; Lee T.; Kim B.-J.; Tu C.W.; Park S.-J.

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Electrical and structural properties of antimony-doped p-type ZnO nanorods with self-corrugated surfaces

机译：具有自波纹表面的掺锑p型ZnO纳米棒的电学和结构性能

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We report on p-type conductivity in antimony (Sb)-doped ZnO (ZnO:Sb) nanorods which have self-corrugated surfaces. The p-ZnO:Sb-ZnO nanorod diode shows good rectification characteristics, confirming that a p-n homojunction is formed in the ZnO nanorod diode. The low-temperature photoluminescence (PL) spectra of the ZnO:Sb nanorods reveal that the p-type conductivity in p-ZnO:Sb is related to the SbZn-2V Zn complex acceptors. Transmission electron microscopy (TEM) analysis of the ZnO:Sb nanorods also shows that the p-type conductivity is attributed to the SbZn-2V Zn complex acceptors which can be easily formed near the self-corrugated surface regions of ZnO:Sb nanorods. These results suggest that the SbZn-2VZn complex acceptors are mainly responsible for the p-type conductivity in ZnO:Sb nanorods which have corrugated surfaces.

机译：我们报告了具有自波纹表面的锑（Sb）掺杂的ZnO（ZnO：Sb）纳米棒中的p型电导率。 p-ZnO：Sb / n-ZnO纳米棒二极管显示出良好的整流特性，证实在ZnO纳米棒二极管中形成了p-n同质结。 ZnO：Sb纳米棒的低温光致发光（PL）光谱表明，p-ZnO：Sb中的p型电导率与SbZn-2V Zn络合物受体有关。 ZnO：Sb纳米棒的透射电子显微镜（TEM）分析还表明，p型导电性归因于SbZn-2V Zn络合物受体，该受体很容易在ZnO：Sb纳米棒的自波纹表面区域附近形成。这些结果表明，SbZn-2VZn络合物受体主要负责具有波纹表面的ZnO：Sb纳米棒中的p型导电性。

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《Nanotechnology》 |2012年第49期|共5页
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Kang J.-W.; Choi Y.-S.; Choe M.; Kim N.-Y.; Lee T.; Kim B.-J.; Tu C.W.; Park S.-J.;
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Electrical and structural properties of antimony-doped p-type ZnO nanorods with self-corrugated surfaces

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