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首页> 外文期刊>Nanotechnology >Electrostatic actuated strain engineering in monolithically integrated VLS grown silicon nanowires
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Electrostatic actuated strain engineering in monolithically integrated VLS grown silicon nanowires

机译：单片集成VLS生长的硅纳米线中的静电激励应变工程

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摘要

In this paper we demonstrate the fabrication and application of an electrostatic actuated tensile straining test (EATEST) device enabling strain engineering in individual suspended nanowires (NWs). Contrary to previously reported approaches, this special setup guarantees the application of pure uniaxial tensile strain with no shear component of the stress while e.g. simultaneously measuring the resistance change of the NW. To demonstrate the potential of this approach we investigated the piezoresistivity of about 3 μm long and 100 nm thick SiNWs but in the same way one can think about the application of such a device on other geometries, other materials beyond Si as well as the use of other characterization techniques beyond electrical measurements. Therefore single-crystal SiNWs were monolithically integrated in a comb drive actuated MEMS device based on a silicon-on-insulator (SOI) wafer using the vapor–liquid–solid (VLS) growth technique. Strain values were verified by a precise measurement of the NW elongation with scanning electron microscopy (SEM). Further we employed confocal μ-Raman microscopy for in situ, high spatial resolution measurements of the strain in individual SiNWs during electrical characterization. A giant piezoresistive effect was observed, resulting in a fivefold increase in conductivity for 3% uniaxially strained SiNWs. As the EATEST approach can be easily integrated into an existing Si technology platform this architecture may pave the way toward a new generation of nonconventional devices by leveraging the strain degree of freedom.
机译：在本文中，我们演示了静电驱动拉伸应变测试（EATEST）设备的制造和应用，该设备能够在单个悬浮纳米线（NWs）中进行应变工程设计。与以前报道的方法相反，这种特殊的设置保证了纯单轴拉伸应变的应用，而没有应力的剪切分量。同时测量NW的电阻变化。为了证明这种方法的潜力，我们研究了约3μm长和100 nm厚的SiNW的压阻，但以同样的方式，可以考虑将这种器件应用于其他几何形状，Si以外的其他材料以及使用电气测量以外的其他表征技术。因此，单晶SiNW被单片集成在采用气液固（VLS）生长技术的，基于绝缘体上硅（SOI）晶片的梳状驱动的MEMS器件中。通过用扫描电子显微镜（SEM）精确测量NW伸长率来验证应变值。此外，我们采用共聚焦μ-拉曼显微镜在电特性表征过程中对单个SiNW中的应变进行了原位，高空间分辨率测量。观察到巨大的压阻效应，导致3％单轴应变SiNW的电导率增加了五倍。由于EATEST方法可以轻松地集成到现有的Si技术平台中，因此该架构可以通过利用应变自由度为新一代非常规设备铺平道路。

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