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首页> 外文期刊>Physica, B. Condensed Matter >Effect of In incorporation on optical properties of amorphous Se-Ge thin films
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Effect of In incorporation on optical properties of amorphous Se-Ge thin films

机译：掺入对非晶Se-Ge薄膜光学性能的影响

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Measurements of optical properties have been made on alloyed samples of Se and Ge with In prepared under vacuum by quenching the melt into water. The optical transmission spectra of film Se90Ge10-xInx (x = 2, 4 and 6) were measured in the wavelength range 400-2000 nm by spectrophotometer. It is observed from optical transmission measurements that optical energy gap (E-g) decreases with In content. It is also found that refractive index (n), real dielectric constant (epsilon') decreases with wavelength (lambda) while extinction coefficient (k), imaginary dielectric constant (epsilon) increases with wavelength (lambda). The absorption coefficient (alpha) increases with photon energy (h nu). (c) 2006 Elsevier B.V. All rights reserved.
机译：通过将熔体淬火到水中，在真空下制备的含In的Se和Ge合金样品上进行了光学性能的测量。用分光光度计在400-2000nm的波长范围内测量膜Se90Ge10-xInx（x ＝ 2、4和6）的光学透射光谱。从光透射率测量中观察到，光能隙（E-g）随着In含量而减小。还发现折射率（n），实际介电常数（ε）随波长（λ）而减小，而消光系数（k），虚介电常数（ε）随波长（λ）而增大。吸收系数（α）随着光子能量（h nu）的增加而增加。 （c）2006 Elsevier B.V.保留所有权利。

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