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首页> 外文期刊>Physica, B. Condensed Matter >Effect of hydrostatic pressure on the donor impurity states in GaN/AlGaN asymmetric coupled quantum wells
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Effect of hydrostatic pressure on the donor impurity states in GaN/AlGaN asymmetric coupled quantum wells

机译：静水压力对GaN / AlGaN非对称耦合量子阱中施主杂质态的影响

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摘要

Based on the effective-mass approximation, the ground-state donor binding energy in zinc-blende(ZB) GaN/AlGaN asymmetric coupled quantum wells(QWs) is investigated variationally, considering the hydrostatic pressure effect. Numerical results show that the donor binding energy is highly dependent on the impurity positions, the asymmetric coupled QWs structure parameters and the hydrostatic pressure. It is found that the donor binding energy increases with increase in the hydrostatic pressure for any impurity position. The hydrostatic pressure has an obvious influence on the donor binding energy of impurity localized inside the wide well of the asymmetric coupled QWs. For any hydrostatic pressure, our results show that the donor binding energy is distributed asymmetrically with respect to the center of the asymmetric coupled QWs. In particular, for the impurity located inside the wide well, the donor binding energy is insensitive to the middle barrier width in ZB GaN/AlGaN asymmetric coupled QWs if the middle barrier width is large.
机译：基于有效质量近似，考虑静水压力效应，对锌共混物（ZB）GaN / AlGaN非对称耦合量子阱（QWs）中的基态供体结合能进行了变异研究。数值结果表明，供体的结合能高度依赖于杂质位置，非对称耦合的量子阱结构参数和静水压力。发现对于任何杂质位置，供体结合能都随着静水压力的增加而增加。静水压力对不对称耦合量子阱宽阱内部杂质的施主结合能有明显影响。对于任何静水压力，我们的结果表明供体结合能相对于不对称耦合QW的中心不对称分布。特别地，对于位于宽阱内部的杂质，如果中间势垒宽度大，则供体结合能对ZB GaN / AlGaN非对称耦合QW中的中间势垒宽度不敏感。

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