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首页> 外文期刊>Physica, B. Condensed Matter >Nanolithography on SrRuO3 thin film surfaces by scanning tunneling microscopy
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Nanolithography on SrRuO3 thin film surfaces by scanning tunneling microscopy

机译:SrRuO3薄膜表面纳米光刻的扫描隧道显微镜

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摘要

Nanolithography on SrRuO3 (SRO) thin film surfaces has been performed by a scanning tunneling microscope under ambient conditions. The depth of etched lines increases with increasing bias voltage but it does not change significantly by increasing the tunneling current. The dependence of line-width on bias voltage from experimental data is in agreement with theoretical calculation based on field-induced evaporation mechanism. Moreover, a three-square nanostructure was successfully created, showing the capability of fabricating nanodevices in SRO thin films.
机译:SrRuO3(SRO)薄膜表面的纳米光刻已通过扫描隧道显微镜在环境条件下进行。蚀刻线的深度随着偏置电压的增加而增加,但是不会随着隧穿电流的增加而明显改变。实验数据表明线宽对偏置电压的依赖性与基于场致蒸发机理的理论计算是一致的。此外,成功创建了一个三平方纳米结构,显示了在SRO薄膜中制造纳米器件的能力。

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