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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Light-induced annealing of hole trap states: A new aspect of light-induced changes in hydrogenated amorphous silicon
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Light-induced annealing of hole trap states: A new aspect of light-induced changes in hydrogenated amorphous silicon

机译：空穴陷阱态的光致退火：氢化非晶硅中光致变化的新方面

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摘要

Details of light-induced annealing of hole trap state in undoped hydrogenated amorphous silicon (a-Si:H) have been studied; it has been found that prolonged illumination significantly reduces the density of hole trap states in the energy range deeper than 0.5 eV, and subsequent thermal annealing increases the density of hole trap states and restored the sample to the initial state before the illumination. We can speculate, from the experimental results and discussion in this work, that defect conversion processes are taking place during the long exposure to light; Si dangling bonds are generated from the precursors or latent sites which manifested as hole trap states located between 0.5 and 0.7 eV from the top of the valence band.
机译：研究了未掺杂的氢化非晶硅（a-Si：H）中空穴陷阱态的光诱导退火的细节;已经发现，延长的照明在比0.5eV更深的能量范围内显着降低了空穴陷阱状态的密度，并且随后的热退火增加了空穴陷阱状态的密度并使样品恢复到照明之前的初始状态。从实验结果和这项工作中的讨论，我们可以推测出缺陷转换过程是在长时间曝光下发生的。 Si悬空键是由前体或潜在位点生成的，表现为从价带顶部开始在0.5和0.7 eV之间的空穴陷阱状态。

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