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首页> 外文期刊>Nanotechnology >16 nm-resolution lithography using ultra-small-gap bowtie apertures
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16 nm-resolution lithography using ultra-small-gap bowtie apertures

机译：使用超小型Gabtie孔径的16个NM分辨率光刻

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摘要

Photolithography has long been a critical technology for nanoscale manufacturing, especially in the semiconductor industry. However, the diffractive nature of light has limited the continuous advance of optical lithography resolution. To overcome this obstacle, near-field scanning optical lithography (NSOL) is an alternative low-cost technique, whose resolution is determined by the near-field localization that can be achieved. Here, we apply the newly-developed backside milling method to fabricate bowtie apertures with a sub-15 nm gap, which can substantially improve the resolution of NSOL. A highly confined electric near field is produced by localized surface plasmon excitation and nanofocusing of the closely-tapered gap. We show contact lithography results with a record 16 nm resolution (FWHM). This photolithography scheme promises potential applications in data storage, high-speed computation, energy harvesting, and other nanotechnology areas.
机译：光刻长期以来一直是纳米级制造业的关键技术，特别是在半导体工业中。 然而，光的衍射性质限制了光学光刻分辨率的连续前进。 为了克服这种障碍，近场扫描光学光刻（NSOL）是一种替代的低成本技术，其分辨率由可以实现的近场定位确定。 在这里，我们应用新开发的背面铣削方法，以制造具有亚15nm间隙的蝴蝶结孔，这可以大大提高NSOL的分辨率。 通过局部表面等离子体激发和紧密锥形间隙的纳米焦，产生高度限制的电气近场。 我们表示联系光刻结果，具有16 nm分辨率（FWHM）。 该光刻方案承担数据存储，高速计算，能量收集和其他纳米技术区域的潜在应用。

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  • 来源
    《Nanotechnology》 |2017年第5期|共8页
  • 作者

    Chen Yang; Qin Jin; Chen Jianfeng; Zhang Liang; Ma Chengfu; Chu Jiaru; Xu Xianfan; Wang Liang;

  • 作者单位

    Univ Sci &

    Technol China Micro &

    Nano Engn Lab Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Anhui Key Lab Optoelect Sci &

    Technol Dept Opt &

    Opt Engn Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Micro &

    Nano Engn Lab Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Anhui Key Lab Optoelect Sci &

    Technol Dept Opt &

    Opt Engn Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Micro &

    Nano Engn Lab Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Micro &

    Nano Engn Lab Hefei 230026 Anhui Peoples R China;

    Purdue Univ Sch Mech Engn W Lafayette IN 47907 USA;

    Univ Sci &

    Technol China Anhui Key Lab Optoelect Sci &

    Technol Dept Opt &

    Opt Engn Hefei 230026 Anhui Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    near-field lithography; nanofabrication; localized surface plasmon; nanofocusing; passive flexure stage;

    机译：近场光刻;纳米制作;局部表面等离子体;纳米焦;被动挠性阶段;

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