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首页> 外文期刊>Crystallography reports >The Electrical and Structural Properties of InyGa1-yAs/InxAl1-xAs/InP Quantum Wells with Different InAs Content
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The Electrical and Structural Properties of InyGa1-yAs/InxAl1-xAs/InP Quantum Wells with Different InAs Content

机译：InAs含量不同的InyGa1-yAs / InxAl1-xAs / InP量子阱的电和结构性质

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摘要

The relationship between the structural characteristics and electronic transport properties of InxAl1-xAs/InyGa1-yAs/InxAl1-xAs/InP HEMT structures has been investigated with a change in the InAs molar fraction both in the quantum well and the buffer layer. The electrical parameters of the samples are measured at different temperatures. The structural parameters of the layers and the characteristics of the interfaces between them are determined by double-crystal X-ray diffraction. An increase in the Hall mobility and electron concentration, as well as in the structural quality of the samples, is observed alongsDEe an increase in the InAs molar fraction in the quantum well. It is established that high electron mobility is retained at small (to 5%) mismatches between the buffer layer and substrate.
机译：研究了InxAl1-xAs / InyGa1-yAs / InxAl1-xAs / InP HEMT结构的结构特性与电子输运性能之间的关系，同时改变了量子阱和缓冲层中InAs的摩尔分数。在不同温度下测量样品的电参数。层的结构参数和它们之间的界面的特性通过双晶X射线衍射确定。随着量子阱中InAs摩尔分数的增加，观察到霍尔迁移率和电子浓度以及样品的结构质量的增加。已经确定，在缓冲层和衬底之间的小的（至5％）失配下，保持了高电子迁移率。

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