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首页> 外文期刊>Crystallography reports >Structural characterization of interfaces in the AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures by high-resolution X-ray reflectometry and diffractometry
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Structural characterization of interfaces in the AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures by high-resolution X-ray reflectometry and diffractometry

机译：AlxGa1-xAs / GaAs / AlxGa1-xAs异质结构中界面的结构表征：高分辨率X射线反射法和衍射法

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摘要

The structural properties of multilayer AlxGa1-xAs/GaAs/AlxGa1-xAs systems (x approximate to 0.2) grown on GaAs(001) substrates are studied by the methods of double-crystal X-ray diffractometry and reflectometry. The depth profiles of deformation, amorphization, and density of the layers are obtained. It is shown that despite small differences (5-7%) in the densities of the AlxGa1-xAs layers and the substrate and the small thickness of the AlAs layer (1-2 nm) separating the GaAs quantum well, it is possible to reconstruct the heterostructure model by the method of X-ray reflectometry and to determine the thickness of the transitional layers at a resolution of 0.1-0.2 nm. It is also established that the reflectometry data obtained complement the X-ray diffraction data considerably and allow one to estimate the roughness and the character of the aluminum distribution at the interfaces. (C) 2005 Pleiades Publishing, Inc.
机译：利用双晶X射线衍射法和反射法研究了在GaAs（001）衬底上生长的多层AlxGa1-xAs / GaAs / AlxGa1-xAs系统（x约0.2）的结构性能。获得了层的变形，非晶化和密度的深度分布。结果表明，尽管AlxGa1-xAs层和衬底的密度差异很小（5-7％），并且GaAs量子阱之间的AlAs层厚度很小（1-2 nm），但可以重建通过X射线反射法测定异质结构模型，并以0.1-0.2 nm的分辨率确定过渡层的厚度。还已经确定，获得的反射率数据大大补充了X射线衍射数据，并允许人们估计界面处铝分布的粗糙度和特征。 （C）2005年Pleiades Publishing，Inc.

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