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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Photoacid generator-polymer interaction on the quantum yield of chemically amplified resists for extreme ultraviolet lithography
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Photoacid generator-polymer interaction on the quantum yield of chemically amplified resists for extreme ultraviolet lithography

机译：光偶联发电机 - 聚合物相互作用对极端紫外光刻的化学放大抗蚀剂的量子产率

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摘要

The transmissivity of thin photoresist films and its variation during exposure are key parameters in photolithographic processing, but their measurement is far from straightforward at extreme ultraviolet (EUV) wavelength. In this work, we analyze thin films of chemically amplified resists, specifically designed for EUV lithography, synthesized with two different backbone polymers and two different photoacid generators with concentrations ranging from 0 to 140% baseline. The static absorption coefficient and the variation of transmissivity upon exposure to EUV light (i.e. the Dill parameter C) are measured experimentally with our established methodology. The Dill parameter C, or bleaching, is interpreted in terms of outgassing and it is correlated with the rate of photoacid decomposition to extract the exposure kinetics and the quantum yield. In addition, the dose to clear of each formulation is measured to determine the lithographic sensitivity. It was found that not only the photoacid molecule but also its interaction with the polymer backbone affects bleaching and thus the quantum yield. These experimental observables (, the Dill parameter C and dose to clear) allow us to determine the amount of clearing volume of the photoresist per unit photoacid. The clearing volume is then discussed as a microscopic figure of merit for the deprotection radius in chemically amplified resists and in light of the pursuit of ultimate resolution in EUV lithography.
机译：薄光致抗蚀剂膜的透射率及其在曝光期间的变化是光刻处理中的关键参数，但它们的测量远远远非直接在极端紫外（EUV）波长。在这项工作中，我们分析了化学放大抗蚀剂的薄膜，专为EUV光刻设计，用两种不同的骨架聚合物和两种不同的光酸发生器合成，其浓度为0至140％基线。用我们的既定方法实验测量静态吸收系数及透射率时的透射率的变化。莳萝参数C或漂白是在除边的条目方面解释的，并且它与光酸分解的速率相关，以提取曝光动力学和量子产量。另外，测量每种配方的剂量以确定光刻敏感性。发现不仅是光偶联分子，而且还具有与聚合物主链的相互作用影响漂白并因此影响量子产率。这些实验可观察（达尔参数C和剂量清除）允许我们确定每单位光酸的光致抗蚀剂的清除量的量。然后将清除量讨论为化学放大抗蚀剂中的脱保护半径的微观图，以及旨在追求EUV光刻的最终分辨率。

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