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首页> 外文期刊>CERAMICS INTERNATIONAL >Preparation and characterization of lead zirconate titanate thin films grown by RF magnetron sputtering for pyroelectric infrared detector arrays
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Preparation and characterization of lead zirconate titanate thin films grown by RF magnetron sputtering for pyroelectric infrared detector arrays

机译：RF磁控溅射用于热电红外探测器阵列的RF磁控溅射铅锆钛晶膜的制备与表征

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摘要

One of the challenges in fabricating pyroelectric infrared (PIR) detector arrays using microelectromechanical system (MEMS) technique lies in finding an optimal growth method of sensing thin films. In this study, lead zirconate titanate (PbZr0.3Ti0.7O3, PZT) thin films were successfully prepared on Pt/TiO2/Si3N4/SiO2/Si substrates by RF magnetron sputtering. The structure, morphology and electrical properties of the films annealed at different temperatures were investigated. PZT thin films deposited at a working pressure of 3.0 Pa with an Ar/O-2 gas flow ratio of 80/20 and annealed at 700 degrees C exhibited smooth surface and excellent dielectric, ferroelectric and pyroelectric properties. The dielectric constant and the loss tangent of the films are 500 and 0.018 at 1 kHz, respectively. The remnant polarization (Pr) and the coercive field (Er) of the films are 33 mu C cm(-2) and 42 kV cm(-1), respectively. The pyroelectric coefficient of the films is 0.033 pC cm(-2) K-1. The value of the figure of merit of detectivity (FD) of PZT thin films reaches up to 1.29 x 10(-5) Pa-1/2 , which indicates that the films have met the requirements for sensitive layers utilized in pyroelectric infrared detector arrays.
机译：使用微机电系统（MEMS）技术制造热电红外线（PIR）检测器阵列的挑战之一在于找到感测薄膜的最佳生长方法。在该研究中，通过RF磁控溅射在Pt / TiO 2 / Si3N4 / SiO 2 / Si基材上制备铅锆钛酸铅（PBZR0.3Ti0.7O3，PZT）薄膜。研究了在不同温度下退火的薄膜的结构，形态和电性能。 PZT薄膜沉积在3.0Pa的工作压力下，Ar / O-2气体流量比为80/20，并在700摄氏度下退火表现出光滑的表面和优异的介电，铁电和热电性。介电常数和膜的损耗切线分别为500％和0.018，分别为1kHz。薄膜的残余偏振（Pr）和矫顽磁场（ER）分别为33μccm（-2）和42kVcm（-1）。薄膜的热电系数是0.033pc cm（-2）k-1。 PZT薄膜的探测器（FD）的价值高达1.29×10（ - 5）PA-1/2，表明薄膜已经满足了在热电红外探测器阵列中使用的敏感层的要求。

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