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Experiments for 3-D structuring of thick resists by gray tone lithography

机译:灰度光刻技术对厚抗蚀剂进行3D结构化的实验

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With the conventional micromachining technologies: isotropic and anisotropic dry and wet etching, a few shapes can be done. To overcome this limitation binary multi-masking technique, laser micro-stereolithography, or direct electron-beam-writing were used, but an inexpensive one-step UV-lithographic method, using the so-called "gray-tone lithography", seems to be the best choice to produce local intensity modulation during exposure process. The paper reports on the study f arbitrary three-dimensional (3-D) shaping of negative and positive thick resists, using this method, and common technologies in standard ICs fabrication. Particular emphasis is placed on the design, manufacturing and use of half-tone transmission masks, required for UV-lithographic step in the fabrication process of mechanical, optical or electronics components. The original design and fabrication method, for the gray-tone reticles, were supported by experiments showing the main advantage of this new technology: the 3-D structuring of thick resists in a single exposure step, and also a high aspect ratio obtained over 9:1. Experimental results are presented in SEM micrographs, only for positive thick resists, showing different 3-D shapes in positive and negative polarity, and also the results obtained by using the wall-type test structure for aspect ratio evaluation. Finally, by optimization of the lithographic process, interesting applications are shown.
机译:使用常规的微加工技术:各向同性和各向异性干法和湿法刻蚀,可以完成几种形状。为了克服这种局限性,使用了激光微立体光刻技术或直接电子束刻写技术,但是采用了一种廉价的单步紫外光刻技术,即所谓的“灰阶光刻”技术。是在曝光过程中产生局部强度调制的最佳选择。该论文报道了使用这种方法对负和正厚抗蚀剂进行任意三维(3-D)成形以及标准IC制造中的常用技术的研究。在机械,光学或电子组件的制造过程中,UV光刻步骤所需的半色调透射掩模的设计,制造和使用特别受重视。实验显示了该灰阶掩模版的原始设计和制造方法,该实验表明了这项新技术的主要优势:在单个曝光步骤中对厚抗蚀剂进行3-D结构化,并且在9倍以上的情况下可获得高纵横比:1。实验结果显示在SEM显微照片中,仅对于正厚的抗蚀剂,在正极和负极上显示不同的3-D形状,以及通过使用壁式测试结构进行纵横比评估而获得的结果。最后,通过优化光刻工艺,展示了有趣的应用。

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