• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells
【24h】

Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells

机译：用于高效多结III-V太阳能电池的p型和n型InGaAsN的深能级

获取原文
获取原文并翻译 | 示例
       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

DLTS measurements have been performed on InGaAsN. Four hole traps have been identified in 1.05 eV, p-type InGaAsN and the removal of a midgap trap ( similar to 0.5 eV) during annealing has been correlated with improved bulk material properties. Improvements in MOCVD growth conditions resulted in a reduction of trap density in 1.05 eV, p-type InGaAsN. Increased indium and nitrogen composition has been correlated with higher defect concentrations in p-type InGaAsN. Two electron traps have been identified in 1.15 eV, n-type InGaAsN and annealing was found to reduce the density of the shallow electron trap. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 6]
机译：DLTS测量已在InGaAsN上进行。已经在1.05 eV，p型InGaAsN中确定了四个空穴陷阱，并且在退火过程中去除中间能隙陷阱（类似于0.5 eV）与改善体材料的性能相关。 MOCVD生长条件的改善导致阱密度降低了1.05 eV，p型InGaAsN。铟和氮的成分增加与p型InGaAsN中较高的缺陷浓度相关。已经在1.15 eV中鉴定出两个电子陷阱，n型InGaAsN，发现退火可以降低浅电子陷阱的密度。 （C）2001 Elsevier Science B.V.保留所有权利。 [参考：6]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号