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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Correlation between the optoelectronic properties and the structure of hydrogenated amorphous silicon-carbon films grown from a C2H2 gas source
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Correlation between the optoelectronic properties and the structure of hydrogenated amorphous silicon-carbon films grown from a C2H2 gas source

机译：从C2H2气源生长的氢化非晶硅碳膜的光电性能与结构之间的相关性

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Hydrogenated amorphous silicon-carbon alloys (aSi(1-x)C(x):H) with an optical gap in the range 2.0-2.45 eV have been grown by plasma-enhanced chemical vapour deposition from C2H2 + SiH4 gas mixtures employing low-purity (99.95%) sources. By changing the acetylene percentage in the plasma from 0.8% to 20% the relative carbon content [C]/[C + Si] in the films was varied between 0.09 and 0.35, as deduced from Rutherford back scattering. Optical, electrical and defect data have been obtained. We have shown that the physical properties of C2H2 based films, without any deposition condition optimization, are comparable with high-electronic-quality CH4-based samples at the same optical gap. The network structure of C2H2 based films differs from CH4 based films, as revealed by infrared spectroscopy.
机译：光学间隙在2.0-2.45 eV范围内的氢化非晶硅碳合金（aSi（1-x）C（x）：H）已通过等离子体增强化学气相沉积法从低浓度的C2H2 + SiH4气体混合物中生长出来。纯度（99.95％）来源。通过将等离子体中的乙炔百分比从0.8％更改为20％，薄膜的相对碳含量[C] / [C + Si]在0.09和0.35之间变化，这是从卢瑟福反向散射推论得出的。已获得光，电和缺陷数据。我们已经证明，在没有任何沉积条件优化的情况下，基于C2H2的薄膜的物理性能与在相同光学间隙下的高电子质量的基于CH4的样品相当。如通过红外光谱法所揭示的，基于C 2 H 2的膜的网络结构不同于基于CH 4的膜。

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