TUNNEL BARRIER GROWTH DYNAMICS OF NB/ALOX-AL/NB AND NB/ALNX-AL/NB JOSEPHSON JUNCTIONS

Dolata R.; Jutzi W.; Neuhaus M.

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TUNNEL BARRIER GROWTH DYNAMICS OF NB/ALOX-AL/NB AND NB/ALNX-AL/NB JOSEPHSON JUNCTIONS

机译：NB / ALOX-AL / NB和NB / ALNX-AL / NB JOSEPHSON结的隧道壁增长动力学

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The growth of very thin aluminum oxide and aluminum nitride tunnel barriers on top of an about 7 nm aluminum layer is deduced by measurements of the reflectivity change of a laser beam due to the decrease of the aluminum laser thickness. Within the first seconds of the process thermal aluminum oxide grows much faster than aluminum nitride in a nitrogen plasma. For both barrier types the reflectivity change can be correlated with the Josephson current density of the finished junctions. In a semi-logarithmic scale the current density versus reflectivity change can be approximated by a straight line up to 20 kA/cm2. High current densities with AlNx seem to be more easily controllable than with AlOx. [References: 12]

机译：通过测量由于铝激光厚度的减小而引起的激光束反射率变化的测量，可以推断出在约7 nm铝层顶部上非常薄的氧化铝和氮化铝隧道势垒的生长。在该过程的最初几秒钟内，热氧化铝在氮等离子体中的生长速度快于氮化铝。对于这两种势垒类型，反射率变化都可以与完成结的约瑟夫森电流密度相关。在半对数标度中，电流密度与反射率变化的关系可以通过一条直线来近似，最高可达20 kA / cm2。 AlNx的高电流密度似乎比AlOx容易控制。 [参考：12]

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《Physica, C. Superconductivity and its applications》 |1995年第2期|共5页
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Dolata R.; Jutzi W.; Neuhaus M.;
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1. TUNNEL BARRIER GROWTH DYNAMICS OF NB/ALOX-AL/NB AND NB/ALNX-AL/NB JOSEPHSON JUNCTIONS [J] . Dolata R., Jutzi W., Neuhaus M. Physica, C. Superconductivity and its applications . 1995,第1a2期

机译：NB / ALOX-AL / NB和NB / ALNX-AL / NB JOSEPHSON结的隧道壁增长动力学
2. Fabrication of submicron Nb/AlOx-Al/Nb tunnel junctions using focused ion beam implanted Nb patterning (FINP) technique [J] . Akaike H., Watanabe T., Nagai N., IEEE Transactions on Applied Superconductivity . 1995,第2期

机译：使用聚焦离子束注入Nb图案化（FINP）技术制造亚微米Nb / AlOx-Al / Nb隧道结
3. Nb/AlOx-Al/Nb Josephson junction fabricated using facing target sputtering system [J] . Morohashi S, Ikuta M, Yamashita N, Physica, C. Superconductivity and its applications . 2005,第2期

机译：使用面靶溅射系统制造的Nb / AlOx-Al / Nb Josephson结
4. Growth and characterization of Nb films and Nb/Al-AlOx/Nb trilayers for Josephson junctions [C] . Xinjie Kang, Liliang Ying, Guofeng Zhang, 2013 IEEE 14th International Superconductive Electronics Conference . 2013

机译：约瑟夫森结的Nb膜和Nb / Al-AlOx / Nb三层的生长和表征
5. Scanning Tunneling Microscopy Studies of Charge Density Waves in NbSe2 and μSR studies of Nickel doping in BaFe2As 2 [D] . Arguello Ortiz, Carlos Jose. 2014

机译：扫描Nbse2中的电荷密度波的扫描显微镜研究和镍掺杂的μSR研究2
6. Spectroscopy of bulk and few-layer superconducting NbSe2 with van der Waals tunnel junctions [O] . T. Dvir, F. Massee, L. Attias, -1

机译：范德华隧道结的块状和多层超导NbSe2的光谱学
7. Properties of Unshunted and Resistively Shunted Nb/AlOx-Al/Nb Josephson Junctions With Critical Current Densities from 0.1 mA/{\mu}m^2 to 1 mA/{\mu}m^2 [O] . Tolpygo, Sergey K., Bolkhovsky, Vladimir, Zarr, Scott, 2017

机译：Nh / alOx-al / Nb Josephson无阻和电阻分布的性质临界电流密度为0.1 ma / {\ mu} m ^ 2至1的结毫安/ {\亩}平方公尺
8. Tunneling Properties of Single Crystal Nb/Nb2O5/Pb Josephson Junctions [R] . Celaschi, S., Geballe, T., Lowe, W. P. 1983

机译：单晶Nb / Nb2O5 / pb Josephson结的隧穿特性

TUNNEL BARRIER GROWTH DYNAMICS OF NB/ALOX-AL/NB AND NB/ALNX-AL/NB JOSEPHSON JUNCTIONS

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