• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文OA文献 >Photovoltaic applications of Si and Ge thin films deposited by PECVD
【2h】

Photovoltaic applications of Si and Ge thin films deposited by PECVD

机译：采用pECVD沉积si和Ge薄膜的光伏应用

页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This thesis represents a systematic study of amorphous silicon microcrystalline silicon and germanium thin films, and a-Si:H thin film solar cells fabricated using an OPT plasma lab 100 RF PECVD system carried out with a view to studying novel lighttrapping structures for thin film solar cells and novel IR photovoltaic cells. The work includes the optimisation of amorphous based single layers by optical and electrical characterisation, their doping and the fabrication and optimisation of single junction solar cells. These developments were extended to include deposition of microcrystalline and germanium films with the aim of developing a range of multijunction and single junction research devices. The optical characterisation of intrinsic amorphous based layers shows that device-grade layer fabrications are achievable with more than 90% absorption in the 450 to 550 nm wavelength range which can be deposited at 4-5?A/s with good thickness uniformity. The bandgap of intrinsic amorphous layers can be tuned from 1.4 to 1.7 eV. Secondary Ion Mass Spectroscopy (SIMS) depth profile characterisation has verified that doping levels in p-type and n type are in the range of 1021 atoms/cm3 which can maintain high open circuit voltage of 0.83V in the single junction device. Systematic single layers well as in-device optimisations lead to the best single junction devices fabricated at a temperature of 250oC and at a pressure of 350 mT and of initially 8.22% efficiency. Initial quantum efficiency (QE) measurements show 75% photon absorption at 550 nm wavelength. A novel technique of wavelength and angle resolved scattering (WARS) measurements have been used to analyse the effects of textured TCOs on light-trapping in single junction device. Showing Asahi-U to be the best substrate with regards to light-trapping, although thicker films benefited more from TEC8 . Deposition of microcrystalline silicon and germanium have also been reported. More focus has been given to optical characterisation of germanium films whose absorption has reached more than 70% in 400 to 1600 nm wavelength range with successful n-type and p-type doping. Ohmic contacts with a low resistivity of 0.029-cm for p-type Ge with the usage of Ni have been achieved. The overall working capacity of the OPT PECVD tool has been analysed and it was concluded that chamber design modification are essential for the system to work in a multidisciplinary field to avoid serious chamber contamination and 10% efficient a:Si:H benchmarks.
机译：本论文代表了对非晶硅微晶硅和锗薄膜以及使用OPT等离子实验室100 RF PECVD系统制造的a-Si：H薄膜太阳能电池的系统研究，旨在研究薄膜太阳能的新型光阱结构电池和新型IR光伏电池。这项工作包括通过光学和电学特性优化基于非晶的单层，其掺杂以及单结太阳能电池的制造和优化。这些发展已扩展到包括微晶膜和锗膜的沉积，目的是开发一系列多结和单结研究设备。本征非晶基层的光学特性表明，在450至550 nm波长范围内具有90％以上的吸收率，可以实现器件级的层制造，并且可以以4-5？A / s的厚度均匀性进行沉积。本征非晶层的带隙可以从1.4 eV调整到1.7 eV。二次离子质谱（SIMS）深度分布表征已验证p型和n型掺杂水平在1021原子/ cm3的范围内，可以在单结器件中维持0.83V的高开路电压。系统化的单层以及器件内的优化导致了在250oC的温度和350 mT的压力下制造的最佳单结器件，效率最初为8.22％。初始量子效率（QE）测量显示在550 nm波长处有75％的光子吸收。波长和角度分辨散射（WARS）测量的新技术已用于分析带纹理的TCO对单结器件中光阱的影响。尽管较厚的薄膜从TEC8中受益更多，但显示出Asahi-U在光陷获方面是最好的基材。也已经报道了微晶硅和锗的沉积。锗薄膜的光学表征已得到更多关注，锗薄膜在成功进行n型和p型掺杂后，在400至1600 nm波长范围内的吸收率已超过70％。对于使用Ni的p型Ge，已经实现了具有0.029cm的低电阻率的欧姆接触。分析了OPT PECVD工具的整体工作能力，得出的结论是，修改腔室设计对于该系统在多学科领域工作至关重要，以避免严重的腔室污染和10％的a：Si：H基准效率。

著录项

  • 作者

    Rind M. Akhtar;

  • 作者单位
  • 年度 2014
  • 总页数
  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号