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WAFER SCALE MONOLITHIC CMOS-INTEGRATION OF FREE-AND NON-FREE-STANDING METAL- AND METAL ALLOY-BASED MEMS STRUCTURES IN A SEALED CAVITY AND METHODS OF FORMING THE SAME
WAFER SCALE MONOLITHIC CMOS-INTEGRATION OF FREE-AND NON-FREE-STANDING METAL- AND METAL ALLOY-BASED MEMS STRUCTURES IN A SEALED CAVITY AND METHODS OF FORMING THE SAME
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机译：密封腔中自由和非自由的基于金属和金属合金的晶圆结构的晶片级全尺寸CMOS集成及其形成方法
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摘要
An assembly of metallic MEMS structures directly fabricated on planarized CMOS substrates, containing the application-specific integrated circuit (ASIC), by direct deposition and subsequent microfabrication steps on the ASIC interconnect layers, with integrated capping for packaging, is provided. The MEMS structures comprise at least one MEMS device element, with or without moveable parts anchored on the CMOS ASIC wafer with electrical contact provided via the metallic interconnects of the ASIC. The MEMS structures can also be made of metallic alloys, conductive oxides and amorphous semiconductors. The integrated capping, which provides a sealed cavity, is accomplished through bonding pads defined in the post-processing of the CMOS substrate.
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