首页> 外国专利> WAFER LEVEL CHIP SCALE PACKAGE, STACKED PACKAGE THEREOF, AND FABRICATING METHOD THEREOF TO REDUCE THICKNESS OF SEMICONDUCTOR CHIP AND MAINTAIN INTENSITY OF CHIP SCALE PACKAGE

WAFER LEVEL CHIP SCALE PACKAGE, STACKED PACKAGE THEREOF, AND FABRICATING METHOD THEREOF TO REDUCE THICKNESS OF SEMICONDUCTOR CHIP AND MAINTAIN INTENSITY OF CHIP SCALE PACKAGE

机译:晶片级芯片包装,其中的堆叠式包装及其制造方法,以降低半导体芯片的厚度和芯片包装的主要强度

摘要

PURPOSE: A wafer level chip scale package, a stacked package thereof, and a fabricating method thereof are provided to reduce thickness of a semiconductor chip and maintain intensity of a chip scale package by adhering a wiring substrate on a back side of the semiconductor chip. CONSTITUTION: A semiconductor chip(34) includes an active side and a back side opposite to the active side. A plurality of chip pads(31) are formed on the active side. A via(37) is formed on the chip pad. An insulating layer(38) is formed on an inner side of the via. A plug(50) is formed in the inside of the via and is electrically connected to the chip pad. A wiring substrate is adhered on the back side of the semiconductor chip. A substrate pad(45) is formed on an upper face of the wiring substrate. The substrate pad is electrically connected to the plug. A connection pad(47) is formed on a lower face of the wiring substrate opposite to the upper face of the wiring substrate. The connection pad is electrically connected to the substrate pad.
机译:用途:提供晶片级芯片级封装,其堆叠封装及其制造方法,以通过将布线基板粘附在半导体芯片的背面上来减小半导体芯片的厚度并保持芯片级封装的强度。组成:一种半导体芯片(34),包括有源侧和与有源侧相反的背面。在有源侧上形成多个芯片焊盘(31)。在芯片焊盘上形成通孔(37)。在通孔的内侧上形成绝缘层(38)。插塞(50)形成在通孔的内部并且电连接到芯片焊盘。布线基板粘附在半导体芯片的背面上。在布线基板的上表面上形成基板焊盘(45)。衬底垫电连接到插头。在布线基板的与布线基板的上表面相反的下表面上形成连接焊盘(47)。连接垫电连接到衬底垫。

著录项

  • 公开/公告号KR20040083796A

    专利类型

  • 公开/公告日2004-10-06

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030018446

  • 发明设计人 JUNG TAE GYEONG;KIM HYEONG SEOP;

    申请日2003-03-25

  • 分类号H01L23/12;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:53

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