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COMPARISON BETWEEN CONVENTIONAL AND GRADED-CHANNEL SOI nMOSFETs IN LOW TEMPERATURE OPERATION

机译:低温工作条件下常规和梯度沟道SOI nMOSFET的比较

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摘要

This paper shows the behavior of graded-channel fully depleted SOI devices (GC SOI nMOSFET) operating at low temperatures. The study started with the comparison between the GC and conventional SOI structures. The threshold voltage, the subthreshold slope and the transconductance were analyzed through experimental results obtained for a temperature range from 100K to 300K. Numerical bidimensional simulations were done to study the electric field distribution and the impact ionization current rate, for both structures.
机译:本文显示了在低温下工作的渐变通道完全耗尽SOI器件(GC SOI nMOSFET)的行为。该研究从GC与常规SOI结构之间的比较开始。通过在100K至300K温度范围内获得的实验结果分析了阈值电压,亚阈值斜率和跨导。进行了二维数值模拟,以研究两种结构的电场分布和碰撞电离电流速率。

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