Design considerations of vertical GaN nanowire Schottky barrier diodes

著录项

• 来源
  《2017 29th International Symposium on Power Semiconductor Devices and IC's》|2017年|191-194|共4页
• 会议地点 Sapporo(JP)
• 作者

  Gourab Sabui; Vitaly Z. Zubialevich; Mary White; Pietro Pampili; Peter J. Parbrook; Mathew McLaren; Miryam Arredondo-Arechavala; Z. John Shen;

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• 作者单位

  Department of Electrical and Computer Engineering, Illinois Institute of Technology, Chicago, USA;

  Tyndall National Institute, University College Cork, Ireland;

  Tyndall National Institute, University College Cork, Ireland;

  Tyndall National Institute, University College Cork, Ireland;

  Tyndall National Institute, University College Cork, Ireland;

  Queen's University, Belfast, Northern Ireland;

  Queen's University, Belfast, Northern Ireland;

  Department of Electrical and Computer Engineering, Illinois Institute of Technology, Chicago, USA;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  dielectric materials; gallium compounds; III-V semiconductors; nanowires; sapphire; Schottky diodes; technology CAD (electronics); wide band gap semiconductors;

  机译：介电材料;镓化合物; III-V半导体;纳米线;蓝宝石;肖特基二极管;技术CAD（电子）;宽带隙半导体;