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首页> 外文会议>2017 32nd Symposium on Microelectronics Technology and Devices >Simulation of InGaAs/InGaP multiple quantum well systems for multijunction solar cell
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Simulation of InGaAs/InGaP multiple quantum well systems for multijunction solar cell

机译：多结太阳能电池InGaAs / InGaP多量子阱系统的仿真

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摘要

Multijunction solar cells hold the actual world record efficiency, converting 46% of the solar energy into electricity on ground, and are the very basis of spatial missions' power supply. Multiple quantum well systems are one of the possible solutions to overcome a major technological challenge of this type of device, namely, finding materials with appropriate bandgap and lattice parameter that can lead to current matching between the stacked pn junctions. In this work, as an alternative to face this issue, we present a theoretical study on the strain-compensated InxGa1-xAs/InyGa1-yP multiple quantum well system to be applied as the active region in such multiple junctions. In principle, this system is expected to present more radiation hardness than the state-of-art quantum well multijunction solar cells based on InGaAs/GaAsP. Several combinations of thicknesses and compositions of wells and barriers were probed, leading to a broad range of the effective bandgap energy, from 0.7 to 1.3 eV. Some of the simulated quantum well system configurations match the optimal energies for devices containing 1 to 5 junctions for both terrestrial and spatial applications.
机译：多结太阳能电池保持着世界纪录的效率，将46％的太阳能转换为地面电力，是空间飞行任务供电的基础。多量子阱系统是克服此类器件的一项重大技术挑战的可能解决方案之一，即寻找具有合适带隙和晶格参数的材料，这些材料会导致堆叠的pn结之间的电流匹配。在这项工作中，作为解决此问题的替代方法，我们提出了一种应变补偿的InxGa 1-x As / InyGa 1-y P多量子阱的理论研究在这样的多个结中用作有源区的系统。原则上，与基于InGaAs / GaAsP的最新型量子阱多结太阳能电池相比，该系统有望具有更高的辐射硬度。探测了阱和势垒的厚度和成分的几种组合，从而导致有效带隙能量的范围很广，从0.7到1.3 eV。对于地面和空间应用，某些模拟量子阱系统配置与包含1至5个结的设备的最佳能量匹配。

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