Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic

机译：质子辐射对自对准三栅极SOI p型隧道FET输出特性的影响

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This paper reports for the first time the study of radiation effects on triple gate SOI tunnel FETs. In this work, devices with 1 μm width and three different channel lengths were exposed to a 600 keV proton radiation source and their current-voltage behavior was analyzed after 1 Mrad(Si) of accumulated total dose, comparing the results obtained before and after irradiation. It was possible to notice a drain current decrease in the shorter channel devices. However, this total dose influence was not so prominent in the longer channel ones. The reasons for both phenomena is discussed based on the competition between the drain current split and the high channel resistance.

机译：本文首次报道了辐射对三栅极SOI隧道FET的影响。在这项工作中，将宽度为1μm且具有三种不同沟道长度的器件暴露于600 keV质子辐射源，并在累积总剂量1 Mrad（Si）之后分析其电流-电压行为，比较辐照前后的结果。在较短的沟道器件中可能会发现漏极电流减小。但是，这种总剂量的影响在较长的通道中并不那么突出。基于漏极电流分配和高沟道电阻之间的竞争，讨论了两种现象的原因。

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来源
《2017 32nd Symposium on Microelectronics Technology and Devices》|2017年|1-4|共4页
会议地点 Fortaleza(BR)
作者
H. L. F. Torres; J. A. Martino; R. Rooyackers; A. Vandooren; E. Simoen; C. Claeys; P. G. D. Agopian;
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作者单位

LSI/PSI/USP - University of Sao Paulo, Brazil;

LSI/PSI/USP - University of Sao Paulo, Brazil;

imec, Leuven, Belgium;

imec, Leuven, Belgium;

imec, Leuven, Belgium;

imec, Leuven, Belgium;

LSI/PSI/USP - University of Sao Paulo, Brazil;

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原文格式 PDF
正文语种 eng
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关键词
Logic gates; Radiation effects; TFETs; Protons; Silicon-on-insulator; Resistance; Fingers;

机译：逻辑门;辐射效应; TFET;质子;绝缘体上硅;电阻;手指;;

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专利

1. Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view [J] . Agopian P. G. D., Torres H. L. F., Martino J. A., Semiconductor science and technology . 2019,第6期

机译：从TID角度比较质子辐照三栅极SOI TFET和鳍片
2. Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view [J] . Agopian P. G. D., Torres H. L. F., Martino J. A., Semiconductor science and technology . 2019,第6期

机译：Proton辐照的三栅极SOI TFET与TID角度的比较
3. Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages [J] . Tiwari Vishal A., Divakaruni Rama, Hook Terence B., Japanese journal of applied physics . 2016,第4s期

机译：陷阱控制的隧穿对硅锗沟道p型FET中按比例缩放电源电压的栅极感应的漏极泄漏的影响
4. Proton radiation effects on the self-aligned triple gate SOI p-type Tunnel FET output characteristic [C] . H. L. F. Torres, J. A. Martino, R. Rooyackers, Symposium on Microelectronics Technology and Devices . 2017

机译：质子辐射对自对准三栅极SOI P型隧道FET输出特性的影响
5. Gate tunneling in MOSFETs and dynamic characteristics of MOS integrated circuits. [D] . Jopling, Jason. 2004

机译：MOSFET中的栅极隧穿和MOS集成电路的动态特性。
6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. P-Type Tunnel FETs With Triple Heterojunctions [O] . Huang, Jun Z., Long, Pengyu, Povolotskyi, Michael, 2016

机译：具有三个异质结的p型隧道FET
8. Study of proton radiation effects on analog IC designed for high energy physics in a BICMOS-JFET Radhard SOI technology [R] . Dentan, M. , Delagnes, E. , Fourches, N. , 1994

机译：用于BICmOs-JFET Radhard sOI技术的高能物理模拟IC的质子辐射效应研究

Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic

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