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首页> 外文会议>Symposium on Microelectronics Technology and Devices >Proton radiation effects on the self-aligned triple gate SOI p-type Tunnel FET output characteristic
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Proton radiation effects on the self-aligned triple gate SOI p-type Tunnel FET output characteristic

机译：质子辐射对自对准三栅极SOI P型隧道FET输出特性的影响

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摘要

This paper reports for the first time the study of radiation effects on triple gate SOI tunnel FETs. In this work, devices with 1 μm width and three different channel lengths were exposed to a 600 keV proton radiation source and their current-voltage behavior was analyzed after 1 Mrad(Si) of accumulated total dose, comparing the results obtained before and after irradiation. It was possible to notice a drain current decrease in the shorter channel devices. However, this total dose influence was not so prominent in the longer channel ones. The reasons for both phenomena is discussed based on the competition between the drain current split and the high channel resistance.
机译：本文首次报告了对三栅极SOI隧道FET的辐射效应研究。在这项工作中，具有1μm宽度和三种不同通道长度的装置暴露于600keV质子辐射源，并且在累积总剂量的1 mrad（Si）后分析了它们的电流 - 电压行为，比较了在照射前后获得的结果。可以注意到较短的频道设备中的漏极电流降低。然而，这种总剂量影响在较长的通道中没有如此突出。基于漏极电流分流与高通道电阻之间的竞争来讨论这两种现象的原因。

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