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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Reticle Defect Printability for Sub-0.3k_1 Chromeless Phase Lithography(CPL) Technology
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Reticle Defect Printability for Sub-0.3k_1 Chromeless Phase Lithography(CPL) Technology

机译：低于0.3k_1的无铬相光刻（CPL）技术的光罩缺陷可印刷性

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Chromeless Phase Lithography (CPL) with a high NA exposure tool is shown to be an attractive technology solution for the 65nm node. Under strong image enhancement conditions, the traditional definition of minimum defect printability specifications is no longer adequate. This paper investigates defect printability issues for CPL technology. Based on optimized scattering bar OPC treatments through pitch, a set of defect printability quantification (DPQ) patterns was designed. In the DPQ design, a number of defect types have been programmed with progressively increasing defect size from 0.05(λ/NA) to 0.3(λ/NA). Each defect type and size on the actual CPL reticle were then fully characterized using an advanced CD SEM metrology system, the KLA8450R~(TM) with both wafer and reticle capabilities. This is a very critical step for quantifying defect printability, since in order to accurately assess the printability, the defect dimension must be well correlated to the original DPQ design on the reticle. The DPQ reticle was then printed using a high numerical aperture (NA) scanner (ASML /850~(TM))so that it is possible to characterize the defect printability for each of the programmed defects and the impact on CD through pitch. Minimum printable defect (MPD), maximum non-printable defect (MNPD), and critical dimension (CD) variation percentage were used as metrics to characterize the critical defect size and the sensitivity of each defect type. The purpose of this study is to understand the tolerance of the CLM technology to printable defects and establish a realistic and sensible defect specification.
机译：具有高NA曝光工具的无铬相位光刻（CPL）被证明是针对65nm节点的有吸引力的技术解决方案。在强图像增强条件下，最小缺陷可印刷性规范的传统定义已不再足够。本文研究了CPL技术的缺陷可印刷性问题。基于通过间距优化的散射棒OPC处理，设计了一组缺陷可印刷性量化（DPQ）模式。在DPQ设计中，已经编程了许多缺陷类型，并将缺陷尺寸从0.05（λ/ NA）逐渐增加到0.3（λ/ NA）。然后，使用先进的CD SEM度量系统KLA8450R〜TM同时具有晶圆和标线片功能，对CPL标线片上的每种缺陷类型和尺寸进行全面表征。这是量化缺陷可印刷性的非常关键的步骤，因为为了准确评估可印刷性，缺陷尺寸必须与光罩上的原始DPQ设计良好相关。然后使用高数值孔径（NA）扫描仪（ASML / 850〜）印刷DPQ掩模版，以便可以表征每个编程缺陷的缺陷可印刷性，以及通过间距对CD的影响。最小可打印缺陷（MPD），最大不可打印缺陷（MNPD）和临界尺寸（CD）变化百分比用作度量标准，以表征关键缺陷尺寸和每种缺陷类型的敏感性。这项研究的目的是了解CLM技术对可打印缺陷的容忍度，并建立切合实际和合理的缺陷规范。

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