• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Damage to VUV, EUV, and x-ray optics II >Radiation hardness of Al_xGa_(1-x)N photodetectors exposed to Extreme Ultraviolet (EUV) light beam
【24h】

Radiation hardness of Al_xGa_(1-x)N photodetectors exposed to Extreme Ultraviolet (EUV) light beam

机译：暴露于极紫外（EUV）光束下的Al_xGa_（1-x）N光电探测器的辐射硬度

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report on the results of fabrication and optoelectrical characterization of Gallium Nitride (GaN) based Extreme UltraViolet (EUV) photodetectors. Our devices were Schottky photodiodes with a finger-shaped rectifying contact, allowing better penetration of light into the active region. GaN layers were epitaxially grown on Silicon (111) by Metal-Organic-Chemical Vapor Deposition (MOCVD). Spectral responsivity measurements in the Near UltraViolet (NUV) wavelength range (200-400 nm) were performed to verify the solar blindness of the photodetectors. After that the devices were exposed to the EUV focused beam of 13.5 nm wavelength using table-top EUV setup. Radiation hardness was tested up to a dose of 3.3-10~(19) photons/cm~2. Stability of the quantum efficiency was compared to the one measured in the same way for a commercially available silicon based photodiode. Superior behavior of GaN devices was observed at the wavelength of 13.5 nm.
机译：我们报告基于氮化镓（GaN）的极紫外（EUV）光电探测器的制造和光电特性的结果。我们的器件是具有手指形整流触点的肖特基光电二极管，可以使光更好地穿透到有源区。通过金属有机化学气相沉积（MOCVD）在硅（111）上外延生长GaN层。在近紫外（NUV）波长范围（200-400 nm）中进行光谱响应度测量，以验证光电探测器的日盲性。之后，使用台式EUV设置将设备暴露于13.5 nm波长的EUV聚焦光束。测试辐射硬度直至剂量为3.3-10〜（19）光子/ cm〜2。将量子效率的稳定性与以可商购的硅基光电二极管以相同方式测量的效率进行了比较。在13.5 nm的波长处观察到GaN器件的优异性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号