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首页> 外文会议>International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China >Nucleation and growth of ZnO on (1 1 20) sapphire substrates using molecular beam epitaxy
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Nucleation and growth of ZnO on (1 1 20) sapphire substrates using molecular beam epitaxy

机译：使用分子束外延在（1 1 20）蓝宝石衬底上ZnO的成核和生长

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摘要

It has been recently demonstrated that it is possible to eliminate 30?rotation twins in c-oriented epitaxial ZnO films by growing on the (1 1 2 0) face of sapphire despite the apparent symmetry mismatch between the (6-fold) epilayer and the (2-fold) substrate. To further elucidate the details of the growth process, we have investigated the initial stages of growth of ZnO on (1 1 20) sapphire using molecular beam epitaxy. Films of approximately 3, 5, 8, 10, 20, 100, and 600 nm thickness were investigated by in situ reflection high-energy diffraction, high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and extended X-ray absorption (XAFS). XAFS indicates that there is no discernible change in nearest-neighbor distance with film thickness. On the other hand, HRXRD measurements indicate an ～1% increase in the c-lattice constant with decreasing film thickness. XAFS measurements of the second nearest-neighbor structural disorder were observed to increase sharply for the thinnest films implying that distortion of bond angles is responsible for the increase in the c-axis observed by HRXRD. HRXRD reciprocal area maps of the symmetric ZnO (0002) reflection indicate the onset of diffuse scattering from 20 nm, while AFM indicates a concurrent change in surface morphology suggesting a change in the growth process for t >～ 20 nm.
机译：最近有研究表明，尽管在（6倍）外延层和（6倍）外延层之间存在明显的对称性不匹配，但通过在蓝宝石的（1 1 2 0）面上生长可以消除c取向外延ZnO膜中的30°旋转孪晶。 （2倍）基材。为了进一步阐明生长过程的细节，我们使用分子束外延研究了（1 1 20）蓝宝石上ZnO生长的初始阶段。通过原位反射高能衍射，高分辨率X射线衍射（HRXRD），原子力显微镜（AFM）和扩展研究了大约3、5、8、10、20、100和600 nm厚度的膜X射线吸收（XAFS）。 XAFS表示，最近邻距离没有随膜厚的变化而变化。另一方面，HRXRD测量表明，随着膜厚度的减小，c晶格常数增加了约1％。对于最薄的薄膜，观察到第二近邻结构紊乱的XAFS测量值急剧增加，这表明键角的变形是HRXRD观察到的c轴增加的原因。对称的ZnO（0002）反射的HRXRD倒数面积图表明从20 nm开始出现散射，而AFM表明表面形态同时发生变化，表明t>〜20 nm时生长过程发生了变化。

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